新型硅取代的BiMeVO：与离子电导率相关的结构性质的合成与研究
New silicon substituted BiMeVO : synthesis and study of structural properties in relation to ionic conductivity.
作者信息
Agnanou A, Mhaira W, Essalim R, Zamama M, Mauvy F, Alga M, Ammar A
机构信息
Laboratoire des Sciences des Matériaux et Optimisation des procèdes, Faculté des Sciences-Semlalia, Université Cadi Ayyad Av. My Abdellah, B. P. 2390 Marrakech Morocco.
CNRS, Univ. Bordeaux, Bordeaux INP, ICMCB, UMR 5026 87 F-33600 Pessac France
出版信息
RSC Adv. 2023 Mar 10;13(12):8015-8024. doi: 10.1039/d3ra00485f. eCollection 2023 Mar 8.
Partial substitution of vanadium with silicon in the compound BiVO, which belongs to the Aurivillius family, leads to the creation of a solid solution BiV Si O (0 ≤ ≤ 0.4). The compound with = 0.1 turns out to be a monoclinic α-form of BiVO, while the compounds with = 0.2 and = 0.3 are orthorhombic β-polymorphs, and the compound with = 0.35 is of tetrahedral γ-polymorph. Electrochemical Impedance Spectroscopy has been used to measure the ionic conductivity of doped samples. The ceramic sample with = 0.1 has the highest ionic conductivity values.
属于奥里维利乌斯家族的化合物BiVO₄中，用硅部分替代钒会导致形成固溶体BiV₁₋ₓSiₓO₄（0 ≤ x ≤ 0.4）。x = 0.1的化合物原来是BiVO₄的单斜α形式，而x = 0.2和x = 0.3的化合物是正交β多晶型物，x = 0.35的化合物是四面体γ多晶型物。电化学阻抗谱已用于测量掺杂样品的离子电导率。x = 0.1的陶瓷样品具有最高的离子电导率值。
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