Ma Rongrong, Sun Yun, Ge Mei, Ma Chenrui, Zhang Junfeng
School of Physics and Information, Shanxi Normal University, Taiyuan 030031, China.
Key Laboratory of Spectral Measurement and Analysis of Shanxi Province, Shanxi Normal University, Taiyuan 030031, China.
Phys Chem Chem Phys. 2023 Mar 22;25(12):8809-8815. doi: 10.1039/d2cp05657g.
The two-dimensional magnetic material CrI has gained considerable attention owing to its promising applications in photoelectric and spin-related devices. Recently, various structural defects in CrI have been identified; however, the charge states of these defects have been mainly ignored. Here, we report on an investigation of the charged defects in monolayer CrI, focused on the electronic and magnetic properties of the five most stable point defects using first-principles calculations. For positively charged I vacancies and negatively charged Cr vacancies, a blue- and red-shift of defect states near the Fermi level can be observed because of the atom relaxation. Our results also indicate that, among the five defects, the Cr interstitial defect has the smallest ionization energy of 0.34 eV, which makes its ionization easiest. Furthermore, a 0.2 enhancement of the magnetic moment on the nearest Cr atom can be found for the I vacancy and Cr interstitial defect. The investigation contributes to the atomic-scale comparison and understanding of the charged defects of monolayer CrI.
二维磁性材料CrI因其在光电和自旋相关器件中的潜在应用而备受关注。最近,人们已经识别出CrI中的各种结构缺陷;然而,这些缺陷的电荷态主要被忽略了。在此,我们报告了对单层CrI中带电缺陷的研究,重点是使用第一性原理计算研究五个最稳定点缺陷的电子和磁性特性。对于带正电的I空位和带负电的Cr空位,由于原子弛豫,可以观察到费米能级附近缺陷态的蓝移和红移。我们的结果还表明,在这五个缺陷中,Cr间隙缺陷的电离能最小,为0.34 eV,这使得其电离最容易。此外,对于I空位和Cr间隙缺陷,可以发现最近邻Cr原子上的磁矩增强了0.2。这项研究有助于在原子尺度上比较和理解单层CrI的带电缺陷。