通过 C-H/C-H 氧化直接芳构化缩聚得到高性能 n 型热电聚合物。
A High-Performance n-Type Thermoelectric Polymer from C-H/C-H Oxidative Direct Arylation Polycondensation.
机构信息
School of Materials Science and Engineering and Tianjin Key Laboratory of Molecular Optoelectronic Science, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), 300072, Tianjin, P. R. China.
Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, 350207, Binhai New City, Fuzhou, China.
出版信息
Angew Chem Int Ed Engl. 2023 May 8;62(20):e202219262. doi: 10.1002/anie.202219262. Epub 2023 Apr 7.
n-Type conjugated polymers (CPs) are crucial in the applications of organic electronics. Direct coupling of electron-deficient C-H monomer via selective C-H activation, namely C-H/C-H oxidative direct arylation polycondensation (Oxi-DArP), is an ideal approach toward such CPs. Herein, Oxi-DArP is firstly adopted to synthesize a high-performance n-type CP using a newly developed monomer, i.e., 3,6-di(thiazol-5-yl)-diketopyrrolopyrrole (Tz-5-DPP). Tz-5-DPP based homopolymer PTz-5-DPP with a molecular weight of 22 kDa has been synthesized via Oxi-DArP. After n-doping, PTz-5-DPP films exhibited electric conductivity values up to 8 S cm and power factors (PFs) up to 106 μW m K . Notably, this PF value is the highest for n-type polymer thermoelectric materials to date. The Oxi-DArP synthesis and the excellent n-type performance of the polymer make this work an important step toward the straightforward and sustainable preparation of high-performance n-type polymer semiconductors.
n 型共轭聚合物（CPs）在有机电子学的应用中至关重要。通过选择性 C-H 活化（即 C-H/C-H 氧化直接芳基化缩聚（Oxi-DArP））直接偶联缺电子 C-H 单体是实现此类 CPs 的理想方法。本文首次采用新开发的单体，即 3,6-二（噻唑-5-基）-二酮吡咯并吡咯（Tz-5-DPP），通过 Oxi-DArP 合成了一种高性能 n 型 CP。通过 Oxi-DArP 合成了 Tz-5-DPP 基均聚物 PTz-5-DPP，其分子量为 22 kDa。经过 n 掺杂后，PTz-5-DPP 薄膜的电导率高达 8 S cm，功率因子（PFs）高达 106 μW m K 。值得注意的是，这一 PF 值是迄今为止 n 型聚合物热电材料的最高值。该聚合反应的 Oxi-DArP 合成和聚合物的优异 n 型性能使这项工作朝着直接、可持续制备高性能 n 型聚合物半导体迈出了重要一步。
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