Department of Energy and Power Engineering, China University of Petroleum, Qingdao 266580, China.
Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, Dalian 116024, China.
Phys Chem Chem Phys. 2023 Mar 29;25(13):9225-9237. doi: 10.1039/d2cp05432a.
With excellent physical and chemical properties, 2D TMDC materials have been widely used in engineering applications, but they inevitably suffer from the dual effects of strain and device size. As typical 2D TMDCs, HfSe and ZrS are reported to have excellent thermoelectric properties. Thermal transport properties have great significance for exerting the performance of materials, ensuring device lifetime and stable operation, but current research is not detailed enough. Here, first-principles combined with the phonon Boltzmann transport equation are used to study the phonon transport inside monolayer HfSe and ZrS under tensile strain and finite size, and explore the band structure properties. Our research shows that they have similar phonon dispersion curve structures, and the band gap of HfSe increases monotonically with the increase of tensile strain, while the bandgap of ZrS increases and then decreases with the increase of tensile strain. Thermal conductivity has obvious strain dependence: with the increase of tensile strain, the thermal conductivity of HfSe gradually decreases, while that of ZrS increases slightly, and then gradually decreases. Reducing the system size can limit the contribution of phonons with a long mean free path, significantly decreasing thermal conductivity through the controlling effect of tensile strain. The mode contribution of thermal conductivity is systematically investigated, and anharmonic properties including mode and frequency-level scattering rates, group velocity and Grüneisen parameters are used to explain the associated mechanism. Phonon scattering processes and channels in various cases are discussed in detail. Our research provides a detailed understanding of the phonon transport and electronic structural properties of low thermal conductivity monolayers of HfSe and ZrS, and further completes the study of thermal transport of the two materials under strain and size tuning, which will provide a foundation for further popularization and application.
二维过渡金属二硫属化物(2D TMDC)材料具有优异的物理和化学性质,已被广泛应用于工程应用中,但它们不可避免地受到应变和器件尺寸的双重影响。作为典型的 2D TMDC,HfSe 和 ZrS 被报道具有优异的热电性能。热输运性质对发挥材料的性能、确保器件的寿命和稳定运行具有重要意义,但目前的研究还不够详细。在这里,我们使用第一性原理结合声子玻尔兹曼输运方程来研究单层 HfSe 和 ZrS 在拉伸应变和有限尺寸下的声子输运,并探索能带结构性质。我们的研究表明,它们具有相似的声子色散曲线结构,HfSe 的能带隙随着拉伸应变的增加单调增加,而 ZrS 的能带隙则先增加后减小。热导率具有明显的应变依赖性:随着拉伸应变的增加,HfSe 的热导率逐渐降低,而 ZrS 的热导率略有增加,然后逐渐降低。减小系统尺寸可以限制长平均自由程声子的贡献,通过拉伸应变的控制作用显著降低热导率。我们系统地研究了热导率的模式贡献,并使用非谐性质,包括模式和频率级散射率、群速度和格林艾森参数,来解释相关机制。详细讨论了各种情况下的声子散射过程和通道。我们的研究提供了对低热导率 HfSe 和 ZrS 单层的声子输运和电子结构性质的详细了解,并进一步完成了对这两种材料在应变和尺寸调节下热输运的研究,这将为进一步的推广和应用提供基础。