Kim Eun Hye, Lee Do Hee, Gu Tae Jun, Yoo Hyobin, Jang Yamujin, Jeong Jaemo, Kim Hyun-Woo, Kang Seog-Gyun, Kim Hoijoon, Lee Heesoo, Jo Kyu-Jin, Kim Beom Ju, Kim Jin Wook, Im Seong Hyun, Oh Chang Seok, Lee Changgu, Kim Ki Kang, Yang Cheol-Woong, Kim Hyoungsub, Kim Youngkuk, Kim Philip, Whang Dongmok, Ahn Joung Real
Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea.
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Nano Lett. 2023 Apr 12;23(7):3054-3061. doi: 10.1021/acs.nanolett.3c00546. Epub 2023 Mar 17.
As the electron mobility of two-dimensional (2D) materials is dependent on an insulating substrate, the nonuniform surface charge and morphology of silicon dioxide (SiO) layers degrade the electron mobility of 2D materials. Here, we demonstrate that an atomically thin single-crystal insulating layer of silicon oxynitride (SiON) can be grown epitaxially on a SiC wafer at a wafer scale and find that the electron mobility of graphene field-effect transistors on the SiON layer is 1.5 times higher than that of graphene field-effect transistors on typical SiO films. Microscale and nanoscale void defects caused by heterostructure growth were eliminated for the wafer-scale growth of the single-crystal SiON layer. The single-crystal SiON layer can be grown on a SiC wafer with a single thermal process. This simple fabrication process, compatible with commercial semiconductor fabrication processes, makes the layer an excellent replacement for the SiO/Si wafer.
由于二维（2D）材料的电子迁移率取决于绝缘衬底，二氧化硅（SiO₂）层表面电荷和形貌的不均匀会降低二维材料的电子迁移率。在此，我们证明了氮氧化硅（SiON）原子级薄的单晶绝缘层可以在碳化硅（SiC）晶圆上外延生长到晶圆尺度，并发现SiON层上的石墨烯场效应晶体管的电子迁移率比典型SiO₂薄膜上的石墨烯场效应晶体管高1.5倍。对于单晶SiON层的晶圆级生长，消除了异质结构生长引起的微米级和纳米级空洞缺陷。单晶SiON层可以通过单一热工艺生长在SiC晶圆上。这种简单的制造工艺与商业半导体制造工艺兼容，使得该层成为SiO₂/Si晶圆的理想替代品。
