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CeO掺杂的石墨相氮化碳的电荷传输与重金属去除效能

Charge transport and heavy metal removal efficacy of graphitic carbon nitride doped with CeO.

作者信息

Badawy Abdelrahman A, Abdel Rehim Mona H, Turky Gamal M

机构信息

Physical Chemistry Department, Institute of Advanced Material Technology and Mineral Resources Research, National Research Centre Cairo Egypt

Packaging Materials Department, National Research Centre Elbehoth Street 33 Cairo 12622 Dokki Egypt

出版信息

RSC Adv. 2023 Mar 17;13(13):8955-8966. doi: 10.1039/d3ra00844d. eCollection 2023 Mar 14.

DOI:10.1039/d3ra00844d
PMID:36936826
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10020990/
Abstract

Doping of graphitic carbon nitride (g-CN) with semiconductors prevents electron-hole recombination and enhances adsorption capacity. This work investigates the synthesis of a water remediation material using g-CN doped with CeO using two different techniques. The chemical structures of the doped g-CN samples were confirmed using FTIR, XRD, XPS and their morphology was studied using SEM-EDX. Charge transport through the doped materials was illustrated by a comprehensive dielectric study using broadband spectroscopy. The ability of doped g-CN to adsorb heavy metals was investigated thoroughly in the light of applying different parameters such as temperature, pH, time, and concentration. The results showed that the mode of doping of g-CN by CeO strongly affected its adsorption capacity. However, g-CN doped with CeO using the first mode adsorbed 998.4 mg g in case of Pb and 448 for Cd. Kinetic study revealed that the adsorption process obeyed PSORE as its is close to its and the rate-controlling step involved coordination among the synthetic materials and the heavy metal ions. The recovery of Pb and Cd ions from various sorbents was investigated by utilizing different molar concentrations of HNO and indicated no significant change in the sorption capability after three different runs. This study has demonstrated an efficient method to obtain a highly efficient adsorbent for removing heavy metals from waste water.

摘要

用半导体对石墨相氮化碳(g-CN)进行掺杂可防止电子-空穴复合并提高吸附能力。本工作研究了采用两种不同技术合成用CeO掺杂的g-CN的水修复材料。使用傅里叶变换红外光谱(FTIR)、X射线衍射(XRD)、X射线光电子能谱(XPS)对掺杂g-CN样品的化学结构进行了确认,并使用扫描电子显微镜-能谱仪(SEM-EDX)研究了它们的形态。通过使用宽带光谱的综合介电研究说明了电荷在掺杂材料中的传输情况。根据温度、pH值、时间和浓度等不同参数,深入研究了掺杂g-CN吸附重金属的能力。结果表明,CeO对g-CN的掺杂方式强烈影响其吸附能力。然而,采用第一种方式掺杂CeO的g-CN在吸附Pb时吸附量为998.4 mg/g,吸附Cd时为448 mg/g。动力学研究表明,吸附过程符合颗粒内扩散模型(PSORE),因为其 接近其 ,且速率控制步骤涉及合成材料与重金属离子之间的配位。通过使用不同摩尔浓度的HNO对从各种吸附剂中回收Pb和Cd离子进行了研究,结果表明在三次不同的运行后吸附能力没有显著变化。本研究展示了一种获得用于从废水中去除重金属的高效吸附剂的有效方法。

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