比较 Si 和 SiC MOSFET，研究 DM 滤波器对用于 DCM 操作的 PFC 隔离型 Ćuk 转换器的影响。

Electrical-Electronics Engineering, Kastamonu University, 37150, Kastamonu, Turkey.

Sci Rep. 2023 Mar 23;13(1):4732. doi: 10.1038/s41598-023-31965-2.

Examining impacts of differential mode (DM) filter topologies covering pi, LC with damping, LC, LCL filter through isolated Ćuk single phase PFC converter is realized in this paper regarding to power factor, THD and efficiency. Application of PFC isolated Ćuk converter is conducted with 42 kHz switching frequency and 50 W power. Each filter is modeled, designed, and applied experimentally via isolated PFC Ćuk converter. Average model derivation based on state-space, for DCM operation of input side inductor of isolated PFC Ćuk converter that is not introduced in literature is the main contribution of the paper. Second main contribution is to analyze filter types by linear methods for the transfer functions cascading the converter and filter transfer functions, which is not presented for PFC converters. It is also presented that solely LCL filter which is not analyzed for PFC converters in detail in literature, does not give desired results. So, increasing the effectivity of LCL filter, new filter structure LCL with parallel C filter is proposed and modeled in this paper. Thanks to the applications, presented results of LCL with parallel C filter is better than others with 4.9% current THD and '1' power factor. Proposed LCL filter ensures 45% reduction of total inductor value, comparing to LC filter. Besides, LCL with C filter provides better control characteristics with maximum allowable gain for stability as 0.7585 higher than other topologies. Moreover, practical design methodology of filter types avoiding complex mathematical procedure is given in this paper. Applications with each filters provide THD requirements, obtained 4.9% as a best value, lower than IEC61000-3-2 standard. Maximum percentage improvement comparing to the IEC61000-3-2 is 27.5% for third harmonic. Furthermore, SiC and Si Mosfets are employed separately in the converter and compared by using each DM filters regarding to power factor, THD, efficiency through applications. As a result, better efficiency with SiC Mosfet as 83% and better THD with Si Mosfet as 4.9% are conducted.

本文通过隔离型 Cuk 单相功率因数校正 (PFC) 转换器，研究了涵盖 pi、带阻尼的 LC、LC 和 LCL 滤波器的差分模式 (DM) 滤波器拓扑结构对功率因数、总谐波失真 (THD) 和效率的影响。应用 42 kHz 开关频率和 50 W 功率的 PFC 隔离 Cuk 转换器。通过隔离型 PFC Cuk 转换器对每种滤波器进行建模、设计和实验应用。本文的主要贡献是基于状态空间推导平均模型，用于隔离型 PFC Cuk 转换器输入侧电感器的不连续导通模式 (DCM) 操作，这在文献中没有介绍。第二个主要贡献是通过线性方法分析滤波器类型，对于级联转换器和滤波器传递函数的传递函数，这对于 PFC 转换器没有提出。还提出了单独的 LCL 滤波器，在文献中没有详细分析 PFC 转换器，没有给出理想的结果。因此，为了提高 LCL 滤波器的有效性，本文提出并建模了一种新的滤波器结构 LCL 与并联 C 滤波器。由于应用，与其他拓扑结构相比，LCL 与并联 C 滤波器的电流 THD 为 4.9%，功率因数为 1，结果更好。与 LC 滤波器相比，所提出的 LCL 滤波器可减少 45%的总电感值。此外，与其他拓扑结构相比，LCL 与 C 滤波器的最大允许增益稳定性更高，为 0.7585，提供更好的控制特性。此外，本文还给出了一种避免复杂数学过程的滤波器类型实用设计方法。通过应用每种滤波器来提供 THD 要求，获得了 4.9%的最佳值，低于 IEC61000-3-2 标准。与 IEC61000-3-2 相比，第三谐波的最大百分比提高了 27.5%。此外，在转换器中分别使用 SiC 和 Si Mosfet，并通过应用每种 DM 滤波器来比较它们的功率因数、THD 和效率。结果表明，SiC Mosfet 的效率更高，为 83%，Si Mosfet 的 THD 更好，为 4.9%。