Tripathy Debajani, Chakroborty Subhendu, Gadtya Ankita Subhrasmita, Mahaling Ram Naresh, Moharana Srikanta, Barik Arundhati, Pal Kaushik
School of Applied Sciences, Centurion University of Technology and Management, Paralakhemundi, Odisha, India.
Department of Basic Sciences, IITM, IES University, Bhopal, MP, India.
Eur Phys J E Soft Matter. 2023 Mar 27;46(3):21. doi: 10.1140/epje/s10189-023-00279-6.
PA-KNNT-P(VDF-HFP) composite films were synthesized using facile solution casting technique. Due to their wide range of applications in dielectric and electrical systems, phosphonic acid (PA)-modified tantalum-doped potassium sodium niobate (KNNT)-polyvinylidene fluoride co-hexafluoropropylene P(VDF-HFP) composite films have piqued the interest of academic researchers. Microstructural analysis showed that PA layers incorporated onto the KNNT particles within the polymer matrix. The PA-KNNT-P(VDF-HFP) composite exhibited improved dielectric and electrical performance over a broad range of frequency, and the value of the dielectric constant of the P(VDF-HFP) composites is improved by ≈119 over the P(VDF-HFP) matrix at a filler loading 19 wt.%. Moreover, PA-KNNT-P(VDF-HFP) composite also reveals higher dielectric constant (≈ 119) and AC conductivity than P(VDF-HFP)-KNNT composites, while maintaining suppressed dielectric loss ([Formula: see text] at 10 Hz). It is also observed that the PA-KNNT-P(VDF-HFP) composite exhibited an insulator-conductor transition with a percolation threshold of f = 13.4 wt.%. As a result of their exceptional dielectric and electrical characteristics, PA-KNNT-P(VDF-HFP) composites have the potential to find exciting practical applications in a variety of electronic domains.
采用简便的溶液浇铸技术合成了PA-KNNT-P(VDF-HFP)复合薄膜。由于膦酸(PA)改性的钽掺杂铌酸钾钠(KNNT)-聚偏氟乙烯-共六氟丙烯P(VDF-HFP)复合薄膜在介电和电气系统中具有广泛的应用，引起了学术研究人员的兴趣。微观结构分析表明，PA层结合在聚合物基体中的KNNT颗粒上。PA-KNNT-P(VDF-HFP)复合材料在很宽的频率范围内表现出改善的介电和电气性能，在填料含量为19 wt.%时，P(VDF-HFP)复合材料的介电常数相对于P(VDF-HFP)基体提高了约119。此外，PA-KNNT-P(VDF-HFP)复合材料还显示出比P(VDF-HFP)-KNNT复合材料更高的介电常数(约119)和交流电导率，同时保持较低的介电损耗(10 Hz时为[公式：见原文])。还观察到PA-KNNT-P(VDF-HFP)复合材料表现出绝缘体-导体转变，其渗流阈值为f = 13.4 wt.%。由于其优异的介电和电气特性，PA-KNNT-P(VDF-HFP)复合材料有可能在各种电子领域找到令人兴奋的实际应用。
