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溅射AlScN薄膜的均匀性和热稳定性

Homogeneity and Thermal Stability of Sputtered AlScN Thin Films.

作者信息

Carmona-Cejas José Manuel, Mirea Teona, Nieto Jesús, Olivares Jimena, Felmetsger Valery, Clement Marta

机构信息

CEMDATIC-ETSI Telecomunicación, Universidad Politécnica de Madrid, Av. Complutense 30, 28040 Madrid, Spain.

出版信息

Materials (Basel). 2023 Mar 8;16(6):2169. doi: 10.3390/ma16062169.

DOI:10.3390/ma16062169
PMID:36984049
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10055955/
Abstract

This work presents a study on the homogeneity and thermal stability of AlScN films sputtered from Al-Sc segmented targets. The films are sputtered on Si substrates to assess their structural properties and on SiO/Mo-based stacked acoustic mirrors to derive their piezoelectric activity from the frequency response of acoustic resonators. Post-deposition annealing at temperatures up to 700 °C in a vacuum are carried out to test the stability of the AlScN films and their suitability to operate at high temperatures. Despite the relatively constant radial composition of the films revealed from RBS measurements, a severe inhomogeneity in the piezoelectric activity is observed across the wafer, with significantly poorer activity in the central zone. RBS combined with NRA analysis shows that the zones of lower piezoelectric activity are likely to show higher surface oxygen adsorption, which is attributed to higher ion bombardment during the deposition process, leading to films with poorer crystalline structures. AFM analysis reveals that the worsening of the material properties in the central area is also accompanied by an increased roughness. XRD analysis also supports this hypothesis, even suggesting the possibility of a ScN non-piezoelectric phase coexisting with the AlScN piezoelectric phase. Thermal treatments do not result in great improvements in terms of piezoelectric activity and crystalline structure.

摘要

这项工作展示了一项关于从铝钪分段靶溅射的AlScN薄膜的均匀性和热稳定性的研究。这些薄膜被溅射在硅衬底上以评估其结构特性，并被溅射在基于SiO/Mo的叠层声学镜上，以便从声谐振器的频率响应中得出其压电活性。在真空中进行高达700°C的沉积后退火，以测试AlScN薄膜的稳定性及其在高温下工作的适用性。尽管卢瑟福背散射（RBS）测量显示薄膜的径向成分相对恒定，但在整个晶圆上观察到压电活性存在严重的不均匀性，中心区域的活性明显较差。RBS结合核反应分析（NRA）表明，压电活性较低的区域可能表现出更高的表面氧吸附，这归因于沉积过程中更高的离子轰击，导致薄膜的晶体结构较差。原子力显微镜（AFM）分析表明，中心区域材料性能的恶化还伴随着粗糙度的增加。X射线衍射（XRD）分析也支持这一假设，甚至表明存在ScN非压电相与AlScN压电相共存的可能性。热处理在压电活性和晶体结构方面并没有带来很大的改善。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/2d42b24d2d4d/materials-16-02169-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/ddf91bc37ce5/materials-16-02169-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/e4a12be0d329/materials-16-02169-g002.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/51623c680eeb/materials-16-02169-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/898ab6900d32/materials-16-02169-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/4583224901db/materials-16-02169-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/e78cd0822254/materials-16-02169-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/064eecaefd87/materials-16-02169-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/2d42b24d2d4d/materials-16-02169-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/ddf91bc37ce5/materials-16-02169-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/e4a12be0d329/materials-16-02169-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/3084f43daba8/materials-16-02169-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/b6d7a972ef69/materials-16-02169-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/51623c680eeb/materials-16-02169-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/898ab6900d32/materials-16-02169-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/4583224901db/materials-16-02169-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/e78cd0822254/materials-16-02169-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/064eecaefd87/materials-16-02169-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a3a/10055955/2d42b24d2d4d/materials-16-02169-g010.jpg

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本文引用的文献

1
Aluminum scandium nitride thin-film bulk acoustic resonators for 5G wideband applications.用于5G宽带应用的氮化铝钪薄膜体声波谐振器。
Microsyst Nanoeng. 2022 Nov 29;8:124. doi: 10.1038/s41378-022-00457-0. eCollection 2022.
2
Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review.体声波谐振器的材料、设计与特性：综述
Micromachines (Basel). 2020 Jun 28;11(7):630. doi: 10.3390/mi11070630.
3
Thin film depth profiling by ion beam analysis.离子束分析薄膜深度剖析。
Analyst. 2016 Oct 17;141(21):5944-5985. doi: 10.1039/c6an01167e.
4
Measurements of the bulk, C-axis electromechanical coupling constant as a function of AlN film quality.作为AlN薄膜质量函数的体C轴机电耦合常数的测量。
IEEE Trans Ultrason Ferroelectr Freq Control. 2000;47(1):292-6. doi: 10.1109/58.818773.