Enhancing Electrochemical Performance with g-CN/CeO Binary Electrode Material.

An innovative form of 2D/0D g-CN/CeO nanostructure was synthesized using a simple precursor decomposition process. The 2D g-CN directs the growth of 0D CeO quantum dots, while also promoting good dispersion of CeOQDs. This 2D/0D nanostructure shows a capacitance of 202.5 F/g and notable rate capability and stability, outperforming the g-CN electrode, reflecting the state-of-the-art g-CN binary electrodes. The binary combination of materials also enables an asymmetric device (g-CN/CeOQDs//AC) to deliver the highest energy density (9.25 Wh/kg) and power density (900 W/kg). The superior rate capacity and stability endorsed the quantum structural merits of CeOQDs and layered g-CN, which offer more accessible sites for ion transport. These results suggest that the g-CN/CeOQDs nanostructure is a promising electrode material for energy storage devices.