State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, P. R. China.
School of Mechanical and Electrical Engineering, Henan Institute of Science and Technology, Xinxiang 453003, P. R. China.
ACS Appl Mater Interfaces. 2023 Apr 19;15(15):19170-19177. doi: 10.1021/acsami.3c00532. Epub 2023 Apr 4.
A novel high-conductivity Ag[(GaTe)(SnTe)] tellurium-based glassy system was fabricated via melt spinning with the glass formation area in the range of = 0-15 mol %. A bulk Ag[(GaTe)(SnTe)] glass (A10) was obtained via spark plasma sintering at 450 K using a 5 min dwell time and 400 MPa pressure. The fabricated A10 glass exhibited higher room-temperature conductivity (σ = 46 S m), larger glass transition temperature ( = 482 K), and ultralower thermal conductivity (∼0.19 W m K) compared to those of previously reported Cu-Ge-Te, Cu-As-Te, Cu-Ge-As-Te, and Cu-As-Se-Te glassy systems with the approximate doping concentrations of 5-20%, demonstrating that this distinctive Ag-GaTe-SnTe system is interesting materials for thermoelectric applications. The high-conductivity Ag-GaTe-SnTe glassy system will extend investigations into similar glassy semiconductors and also can be used for preparing glass ceramics with potential applications in other fields.
通过熔体纺丝成功制备了一种新型的具有高电导率的 Ag[(GaTe)(SnTe)]碲基玻璃态系统，玻璃形成区的范围为 = 0-15 mol%。通过火花等离子烧结，在 450 K 下使用 5 分钟的停留时间和 400 MPa 的压力获得了块状 Ag[(GaTe)(SnTe)]玻璃（A10）。与之前报道的具有约 5-20%掺杂浓度的 Cu-Ge-Te、Cu-As-Te、Cu-Ge-As-Te 和 Cu-As-Se-Te 玻璃态系统相比，所制备的 A10 玻璃表现出更高的室温电导率（σ=46 S m）、更大的玻璃化转变温度（ = 482 K）和超低的热导率（约 0.19 W m K），这表明这种独特的 Ag-GaTe-SnTe 系统是用于热电应用的有趣材料。高电导率的 Ag-GaTe-SnTe 玻璃态系统将扩展对类似玻璃半导体的研究，也可用于制备具有其他领域潜在应用的玻璃陶瓷。
