Gao Zhen, He Xin, Li Wenzhong, He Yao, Xiong Kai
Department of Physics, Yunnan University Kunming 650091 People's Republic of China
Materials Genome Institute, School of Materials and Energy, Yunnan University Kunming 650091 P. R. China.
RSC Adv. 2023 Apr 14;13(17):11742-11750. doi: 10.1039/d3ra00592e. eCollection 2023 Apr 11.
The relationship between the structure and properties of materials is the core of material research. Bulk Pd(PS) materials have been successfully synthesized in the field of three-dimensional materials. After that, various studies on two-dimensional layered materials were conducted. Inspired by these successes, this work used density functional theory based on first principles to explore similar two-dimensional Pd(AsX), where X is S, Se, or Te belonging to the same group. Our findings demonstrate that the Pd(AsS) and Pd(AsSe) monolayers, with HSE06 band gaps of 2.37 and 1.36 eV, respectively, are indirect semiconductors. Additionally, their carrier mobilities [523.23 cm s V and 440.6 cm s V] are also proved to be superior to MoS [∼200 cm s V]. The optical calculations indicate that the Pd(AsSe) monolayer yields suitable valence band edge positions for the visible-light-driven water splitting reactions. More interestingly, at a low applied voltage of 0.14 V, Pd(AsSe) exhibits outstanding oxygen evolution reaction performance. In this study, the possible mechanism for the ability of Pd(AsSe) monolayer to promote photocatalysis and oxygen evolution was explained, which may pave the way for the practical design of further solar-driven high-quality water splitting photocatalysis.
材料的结构与性能之间的关系是材料研究的核心。在三维材料领域已成功合成了块状钯(PS)材料。此后,对二维层状材料进行了各种研究。受这些成功的启发,本工作采用基于第一性原理的密度泛函理论来探索类似的二维钯(AsX),其中X为属于同一族的硫、硒或碲。我们的研究结果表明,钯(AsS)和钯(AsSe)单层,其HSE06带隙分别为2.37和1.36电子伏特,是间接半导体。此外,它们的载流子迁移率[523.23厘米²伏⁻¹秒⁻¹和440.6厘米²伏⁻¹秒⁻¹]也被证明优于二硫化钼[约200厘米²伏⁻¹秒⁻¹]。光学计算表明,钯(AsSe)单层为可见光驱动的水分解反应产生了合适的价带边缘位置。更有趣的是,在0.14伏的低外加电压下,钯(AsSe)表现出出色的析氧反应性能。在本研究中,解释了钯(AsSe)单层促进光催化和析氧能力的可能机制,这可能为进一步太阳能驱动的高质量水分解光催化的实际设计铺平道路。