Pizzuto Angela, Ma Pingchuan, Mittleman Daniel M
Department of Physics, Brown University, Providence, RI 02912, USA.
School of Engineering, Brown University, Providence, RI 02912, USA.
Light Sci Appl. 2023 Apr 19;12(1):96. doi: 10.1038/s41377-023-01137-y.
The coupling of terahertz optical techniques to scattering-type scanning near-field microscopy (s-SNOM) has recently emerged as a valuable new paradigm for probing the properties of semiconductors and other materials on the nanoscale. Researchers have demonstrated a family of related techniques, including terahertz nanoscopy (elastic scattering, based on linear optics), time-resolved methods, and nanoscale terahertz emission spectroscopy. However, as with nearly all examples of s-SNOM since the technique's inception in the mid-1990s, the wavelength of the optical source coupled to the near-field tip is long, usually at energies of 2.5 eV or less. Challenges in coupling of shorter wavelengths (i.e., blue light) to the nanotip has greatly inhibited the study of nanoscale phenomena in wide bandgap materials such as Si and GaN. Here, we describe the first experimental demonstration of s-SNOM using blue light. With femtosecond pulses at 410 nm, we generate terahertz pulses directly from bulk silicon, spatially resolved with nanoscale resolution, and show that these signals provide spectroscopic information that cannot be obtained using near-infrared excitation. We develop a new theoretical framework to account for this nonlinear interaction, which enables accurate extraction of material parameters. This work establishes a new realm of possibilities for the study of technologically relevant wide-bandgap materials using s-SNOM methods.
太赫兹光学技术与散射型扫描近场显微镜(s-SNOM)的结合最近已成为一种有价值的新范式,用于在纳米尺度上探测半导体和其他材料的特性。研究人员已经展示了一系列相关技术,包括太赫兹纳米显微镜(基于线性光学的弹性散射)、时间分辨方法和纳米级太赫兹发射光谱。然而,自20世纪90年代中期该技术问世以来,与几乎所有s-SNOM示例一样,耦合到近场尖端的光源波长很长,通常能量在2.5 eV或更低。将较短波长(即蓝光)耦合到纳米尖端的挑战极大地阻碍了对宽带隙材料(如硅和氮化镓)中纳米级现象的研究。在此,我们描述了首次使用蓝光进行s-SNOM的实验演示。利用410 nm的飞秒脉冲,我们直接从块状硅中产生太赫兹脉冲,并以纳米级分辨率进行空间分辨,结果表明这些信号提供了使用近红外激发无法获得的光谱信息。我们开发了一个新的理论框架来解释这种非线性相互作用,从而能够准确提取材料参数。这项工作为使用s-SNOM方法研究技术相关的宽带隙材料开辟了新的可能性领域。