Institute of Botany, University of the Punjab Lahore, Lahore, 54590, Pakistan.
University of Central Punjab Constituent College Yazman Road Bahawalpur, Bahawalpur, 63000, Pakistan.
Environ Sci Pollut Res Int. 2023 May;30(25):67071-67086. doi: 10.1007/s11356-023-26902-9. Epub 2023 Apr 27.
The foliar applied silicon (Si) has the potential to ameliorate heavy metals, especially cadmium (Cd) toxicity; however, Si dose optimization is strategically important for boosting the growth of soil microbes and Cd stress mitigation. Thus, the current research was performed to assess the Si-induced physiochemical and antioxidant trait alterations along with Vesicular Arbuscular Mycorrhiza (VAM) status in maize roots under Cd stress. The trial included foliar Si application at the rate of 0, 5, 10, 15, and 20 ppm while Cd stress (at the rate of 20 ppm) was induced after full germination of maize seed. The response variables included various physiochemical traits such as leaf pigments, protein, and sugar contents along with VAM alterations under induced Cd stress. The results revealed that exogenous application of Si in higher doses remained effective in improving the leaf pigments, proline, soluble sugar, total proteins, and all free amino acids. Additionally, the same treatment remained unmatched in terms of antioxidant activity compared to lower doses of foliar-applied Si. Moreover, VAM was recorded to be at peak under 20 ppm Si treatment. Thus, these encouraging findings may serve as a baseline to develop Si foliar application as a biologically viable mitigation strategy for maize grown in Cd toxicity soils. Overall, the exogenous application of Si helpful for reducing the uptake of Cd in maize and also improving the mycorrhizal association as well as the philological mechanism and antioxidant activities in plant under cadmium stress conditions. Also, future studies must test more doses concerning to varying Cd stress levels along with determining the most responsive crop stage for Si foliar application.
叶面施硅具有减轻重金属,尤其是镉(Cd)毒性的潜力;然而,硅剂量的优化对于促进土壤微生物的生长和减轻 Cd 胁迫至关重要。因此,目前的研究旨在评估叶面施硅对 Cd 胁迫下玉米根系中生理化学和抗氧化特性变化以及泡囊丛枝菌根(VAM)状态的影响。试验包括叶面施硅 0、5、10、15 和 20 ppm,同时在玉米种子完全发芽后施加 20 ppm 的 Cd 胁迫。响应变量包括叶片色素、蛋白质和糖含量等各种生理化学特性以及诱导 Cd 胁迫下的 VAM 变化。结果表明,高剂量的外源硅仍能有效提高叶片色素、脯氨酸、可溶性糖、总蛋白和所有游离氨基酸的含量。此外,与低剂量叶面施硅相比,相同处理的抗氧化活性仍无法与之相比。此外,VAM 在 20 ppm Si 处理下记录到峰值。因此,这些令人鼓舞的发现可以为开发叶面施硅作为一种在 Cd 毒性土壤中生长的玉米的生物可行的缓解策略提供基础。总的来说,外源硅的应用有助于减少玉米对 Cd 的吸收,同时改善菌根共生以及在 Cd 胁迫条件下植物的生理机制和抗氧化活性。此外,未来的研究必须在不同的 Cd 胁迫水平下测试更多的剂量,并确定最敏感的作物阶段进行叶面施硅。