Misiurev Denis, Kaspar Pavel, Sobola Dinara, Papež Nikola, H Fawaeer Saleh, Holcman Vladimír
Department of Physics, Faculty of Electrical Engineering and Communication, Brno University of Technology, Technicka 2848/8, 616 00 Brno, Czech Republic.
CEITEC BUT, Brno University of Technology, 612 00 Brno, Czech Republic.
Materials (Basel). 2023 Apr 18;16(8):3203. doi: 10.3390/ma16083203.
Over recent decades, the scientific community has managed to make great progress in the theoretical investigation and practical characterization of bismuth ferrite thin films. However, there is still much work to be completed in the field of magnetic property analysis. Under a normal operational temperature, the ferroelectric properties of bismuth ferrite could overcome the magnetic properties due to the robustness of ferroelectric alignment. Therefore, investigation of the ferroelectric domain structure is crucial for functionality of any potential devices. This paper reports deposition and analyzation of bismuth ferrite thin films by Piezoresponse Force Microscopy (PFM) and XPS methods, aiming to provide a characterization of deposited thin films. In this paper, thin films of 100 nm thick bismuth ferrite material were prepared by pulsed laser deposition on multilayer substrates Pt/Ti(TiO)/Si. Our main purpose for the PFM investigation in this paper is to determine which magnetic pattern will be observed on Pt/Ti/Si and Pt/TiO/Si multilayer substrates under certain deposition parameters by utilizing the PLD method and using samples of a deposited thickness of 100 nm. It was also important to determine how strong the measured piezoelectric response will be, considering parameters mentioned previously. By establishing a clear understanding of how prepared thin films react on various biases, we have provided a foundation for future research involving the formation of piezoelectric grains, thickness-dependent domain wall formations, and the effect of the substrate topology on the magnetic properties of bismuth ferrite films.
近几十年来,科学界在铋铁氧体薄膜的理论研究和实际表征方面取得了巨大进展。然而,在磁性能分析领域仍有许多工作要完成。在正常工作温度下,由于铁电排列的稳健性,铋铁氧体的铁电性能会克服磁性能。因此,研究铁电畴结构对于任何潜在器件的功能至关重要。本文报道了通过压电力显微镜(PFM)和XPS方法对铋铁氧体薄膜进行的沉积和分析,旨在对沉积薄膜进行表征。在本文中,采用脉冲激光沉积法在多层衬底Pt/Ti(TiO)/Si上制备了厚度为100nm的铋铁氧体材料薄膜。本文进行PFM研究的主要目的是利用脉冲激光沉积法,在特定沉积参数下,对沉积厚度为100nm的样品,确定在Pt/Ti/Si和Pt/TiO/Si多层衬底上会观察到哪种磁模式。考虑到前面提到的参数,确定测量的压电响应强度也很重要。通过清楚地了解制备的薄膜在各种偏压下的反应,我们为未来涉及压电晶粒形成、厚度依赖的畴壁形成以及衬底拓扑结构对铋铁氧体薄膜磁性能影响的研究奠定了基础。