Institute of Optoelectronic Materials and Devices, Faculty of Materials Metallurgy and Chemistry, Jiangxi University of Science and Technology, Ganzhou 341000, China.
National Rare Earth Function Materials Innovation Center, Ganzhou 341100, China.
Molecules. 2023 Apr 20;28(8):3593. doi: 10.3390/molecules28083593.
CsSnCl double perovskite has attracted wide attention as a promising optoelectronic material because of its better stability and lower toxicity than its lead counterparts. However, pure CsSnCl demonstrates quite poor optical properties, which usually calls for active element doping to realize efficient luminescence. Herein, a facile co-precipitation method was used to synthesize Te and Er-co-doped CsSnCl microcrystals. The prepared microcrystals were polyhedral, with a size distribution around 1-3 μm. Highly efficient NIR emissions at 1540 nm and 1562 nm due to Er were achieved in doped CsSnCl compounds for the first time. Moreover, the visible luminescence lifetimes of Te/Er-co-doped CsSnCl decreased with the increase in the Er concentration due to the increasing energy transfer efficiency. The strong and multi-wavelength NIR luminescence of Te/Er-co-doped CsSnCl originates from the 4f→4f transition of Er, which was sensitized by the spin-orbital allowed S→P transition of Te through a self-trapped exciton (STE) state. The findings suggest that ns-metal and lanthanide ion co-doping is a promising method to extend the emission range of CsSnCl materials to the NIR region.
CsSnCl 双钙钛矿由于其稳定性优于铅基钙钛矿且毒性更低,因此作为一种很有前途的光电材料而受到广泛关注。然而,纯 CsSnCl 的光学性能相当差,通常需要进行活性元素掺杂以实现高效发光。在此,我们采用了一种简便的共沉淀法合成了 Te 和 Er 共掺杂的 CsSnCl 微晶体。所制备的微晶体呈多面体形状,尺寸分布在 1-3μm 左右。首次在掺杂的 CsSnCl 化合物中实现了高效的 1540nm 和 1562nm 的近红外发射,这归因于 Er 的存在。此外,由于能量转移效率的增加,Te/Er 共掺杂 CsSnCl 的可见发光寿命随着 Er 浓度的增加而降低。Te/Er 共掺杂 CsSnCl 的强多波长近红外发光源于 Er 的 4f→4f 跃迁,该跃迁通过自陷激子(STE)态被 Te 的自旋轨道允许的 S→P 跃迁敏化。研究结果表明,ns 金属和镧系离子共掺杂是将 CsSnCl 材料的发射范围扩展到近红外区域的一种很有前途的方法。