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核心技术专利:CN118964589B侵权必究
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基于合成富里酸填充纳米多孔二氧化硅基质中量子尺寸效应和传感器灵敏度量子放大的储能效应。

The Accumulation of Electrical Energy Due to the Quantum-Dimensional Effects and Quantum Amplification of Sensor Sensitivity in a Nanoporous SiO Matrix Filled with Synthetic Fulvic Acid.

机构信息

Institute of Applied Mathematics and Fundamental Sciences, Lviv Polytechnic National University, Bandera Str. 12, 79013 Lviv, Ukraine.

Faculty of Electrical Engineering, Czestochowa University of Technology, ul. J.H. Dąbrowskiego 69, 42-201 Częstochowa, Poland.

出版信息

Sensors (Basel). 2023 Apr 21;23(8):4161. doi: 10.3390/s23084161.


DOI:10.3390/s23084161
PMID:37112503
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10145198/
Abstract

A heterostructured nanocomposite MCM-41 was formed using the encapsulation method, where a silicon dioxide matrix-MCM-41 was the host matrix and synthetic fulvic acid was the organic guest. Using the method of nitrogen sorption/desorption, a high degree of monoporosity in the studied matrix was established, with a maximum for the distribution of its pores with radii of 1.42 nm. According to the results of an X-ray structural analysis, both the matrix and the encapsulate were characterized by an amorphous structure, and the absence of a manifestation of the guest component could be caused by its nanodispersity. The electrical, conductive, and polarization properties of the encapsulate were studied with impedance spectroscopy. The nature of the changes in the frequency behavior of the impedance, dielectric permittivity, and tangent of the dielectric loss angle under normal conditions, in a constant magnetic field, and under illumination, was established. The obtained results indicated the manifestation of photo- and magneto-resistive and capacitive effects. In the studied encapsulate, the combination of a high value of ε and a value of the tgδ of less than 1 in the low-frequency range was achieved, which is a prerequisite for the realization of a quantum electric energy storage device. A confirmation of the possibility of accumulating an electric charge was obtained by measuring the I-V characteristic, which took on a hysteresis behavior.

摘要

采用包埋法制备了一种杂化结构纳米复合材料 MCM-41,其中二氧化硅基质-MCM-41 为主体基质,合成富里酸为有机客体。通过氮气吸附/解吸法,在研究的基质中建立了高度的单孔性,其孔径分布的最大值为 1.42nm。根据 X 射线结构分析的结果,基质和包埋物均表现出无定形结构,客体成分的纳米分散性可能导致其无法表现出来。采用阻抗谱研究了包埋物的电、导电和极化性能。在正常条件下、恒磁场下和光照下,研究了阻抗、介电常数和介电损耗角正切的频率特性变化的性质。结果表明,表现出了光磁电阻和电容效应。在所研究的包埋物中,实现了 ε 值高和低频范围内 tgδ 值小于 1 的结合,这是实现量子电能存储器件的前提条件。通过测量具有滞后行为的 I-V 特性,获得了可以积累电荷的证据。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/13ebfad6ec33/sensors-23-04161-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/14c6f92d4cf2/sensors-23-04161-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/1cd863f81f05/sensors-23-04161-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/e955dcfb1a5f/sensors-23-04161-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/1a8013860d4a/sensors-23-04161-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/cfa3e07263aa/sensors-23-04161-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/4a009190eaee/sensors-23-04161-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/083ba9727ac4/sensors-23-04161-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/13ebfad6ec33/sensors-23-04161-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/14c6f92d4cf2/sensors-23-04161-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/1cd863f81f05/sensors-23-04161-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/e955dcfb1a5f/sensors-23-04161-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/1a8013860d4a/sensors-23-04161-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/cfa3e07263aa/sensors-23-04161-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/4a009190eaee/sensors-23-04161-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/083ba9727ac4/sensors-23-04161-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/456c/10145198/13ebfad6ec33/sensors-23-04161-g008.jpg

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[1]
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[3]
Paper-Based Magneto-Resistive Sensor: Modeling, Fabrication, Characterization, and Application.

Sensors (Basel). 2018-12-11

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