Department of Chemistry, Jadavpur University, Kolkata 700032, India.
Department of Chemistry, Chandernagore College, Hooghly, West Bengal 712136, India.
Inorg Chem. 2023 May 15;62(19):7220-7234. doi: 10.1021/acs.inorgchem.2c04521. Epub 2023 May 2.
Zn(II) (complex ), Cd(II) (complex ), and Hg(II) (complex ) complexes have been synthesized using a triply protonated tptz (Htptz) ligand and characterized mainly by single-crystal X-ray analysis. The general formula of all of the complexes is (Htptz)·Cl·[MCl]·HO (where = 1, 1.5, and 1.5 for complexes , , and , respectively). The crystallographic analysis reveals that the anion···π, anion···π, and several hydrogen bonding interactions play a fundamental role in the stabilization of the self-assembled architectures that in turn help to enhance the dimensionality of all of the complexes. In addition, Hirshfeld surfaces and fingerprint plots have been deployed here to visualize the similarities and differences in hydrogen bonding interactions in , which are very important in forming supramolecular architectures. A density functional theory (DFT) study has been used to analyze and rationalize the supramolecular interactions by using molecular electrostatic potential (MEP) surfaces and combined QTAIM/NCI plots. Then, the device parameters for the complexes (-) have been thoroughly investigated by fabricating a Schottky barrier diode (SBD) on an indium tin oxide (ITO) substrate. It has been observed that the device made from complex is superior to those from complexes and , which has been explained in terms of band gaps, differences in the electronegativities of the central metal atoms, and the better supramolecular interactions involved. Finally, theoretical calculations have also been performed to analyze the experimental differences in band gaps as well as electrical conductivities observed for all of the complexes. Henceforth, the present work combined supramolecular, photophysical, and theoretical studies regarding group 12 metals in a single frame.
使用三重质子化的 tptz(Htptz)配体合成了 Zn(II)(配合物)、Cd(II)(配合物)和 Hg(II)(配合物)配合物,并通过单晶 X 射线分析进行了主要表征。所有配合物的通式均为(Htptz)·Cl·[MCl]·H2O(其中 = 1、1.5 和 1.5 分别对应于配合物、和)。晶体学分析表明,阴离子···π、阴离子···π 和几个氢键相互作用在稳定自组装结构中起基本作用,而这反过来又有助于提高所有配合物的维度。此外,还在这里部署了 Hirshfeld 表面和指纹图来可视化氢键相互作用在中的相似性和差异性,这对于形成超分子结构非常重要。通过使用分子静电势(MEP)表面和组合的 QTAIM/NCI 图进行密度泛函理论(DFT)研究,分析和合理化了超分子相互作用。然后,通过在铟锡氧化物(ITO)衬底上制造肖特基势垒二极管(SBD),对配合物(-)的器件参数进行了彻底研究。观察到由配合物制成的器件优于由配合物和制成的器件,这可以用能带隙、中心金属原子的电负性差异以及涉及的更好的超分子相互作用来解释。最后,还进行了理论计算,以分析所有配合物的实验带隙和电导率差异。因此,本工作将第 12 族金属的超分子、光物理和理论研究结合在一个单一的框架中。