Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
Nanotechnology. 2023 May 16;34(31). doi: 10.1088/1361-6528/acd199.
In this work, the effects of top electrode (TE) and bottom electrode (BE) on the ferroelectric properties of zirconia-based ZrHfO(ZHO) thin films annealed by post-deposition annealing (PDA) are investigated in detail. Among W/ZHO/BE capacitors (BE = W, Cr or TiN), W/ZHO/W delivered the highest ferroelectric remanent polarization and the best endurance performance, revealing that the BE with a smaller coefficient of thermal expansion (CTE) plays a vital role in enhancing the ferroelectricity of fluorite-structure ZHO. For TE/ZHO/W structures (TE = W, Pt, Ni, TaN or TiN), the stability of TE metals seems to have a larger impact on the performance over their CTE values. This work provides a guideline to modulate and optimize the ferroelectric performance of PDA-treated ZHO-based thin films.
在这项工作中，详细研究了顶电极 (TE) 和底电极 (BE) 对通过后沉积退火 (PDA) 退火的基于氧化锆的 ZrHfO(ZHO) 薄膜铁电性能的影响。在 W/ZHO/BE 电容器中（BE = W、Cr 或 TiN），W/ZHO/W 表现出最高的铁电剩余极化和最佳的耐久性性能，表明具有较小热膨胀系数 (CTE) 的 BE 在增强钙钛矿结构 ZHO 的铁电性方面起着至关重要的作用。对于 TE/ZHO/W 结构（TE = W、Pt、Ni、TaN 或 TiN），TE 金属的稳定性似乎对其 CTE 值的性能有更大的影响。这项工作为调制和优化 PDA 处理的基于 ZHO 的薄膜的铁电性能提供了指导。
