Instituto de Ciencias Aplicadas y Tecnología, Universidad Nacional Autónoma de México, Avenida Universidad 3000, Coyoacán, 04510 CDMX, Mexico.
Centro de Investigación Científica y de Educación Superior de Ensenada, Department of Optics, Ensenada, Baja California, Mexico.
Rev Sci Instrum. 2023 May 1;94(5). doi: 10.1063/5.0136260.
We present a Silicon-based Charge-Coupled Device (Si-CCD) sensor applied as a cost-effective spectrometer for femtosecond pulse characterization in the Near Infrared region in two different configurations: two-Fourier and Czerny-Turner setups. To test the spectrometer's performance, a femtosecond Optical Parametric Oscillator with a tuning range between 1100 and 1700 nm and a femtosecond Erbium-Doped Fiber Amplifier at 1582 nm were employed. The nonlinear spectrometer operation is based on the Two-Photon Absorption effect generated in the Si-CCD sensor. The achieved spectrometer resolution was 0.6 ± 0.1 nm with a threshold peak intensity of 2×106Wcm2. An analysis of the nonlinear response as a function of the wavelength, the response saturation, and the criteria to prevent it are also presented.
我们提出了一种基于硅的电荷耦合器件（Si-CCD）传感器，将其应用为在近红外区域中用于飞秒脉冲特性的经济型光谱仪，有两种不同的配置：傅里叶变换和 Czerny-Turner 装置。为了测试光谱仪的性能，使用了调谐范围在 1100 到 1700nm 的飞秒光参量振荡器和 1582nm 的飞秒掺铒光纤放大器。非线性光谱仪的工作原理基于在 Si-CCD 传感器中产生的双光子吸收效应。实现的光谱仪分辨率为 0.6±0.1nm，阈值峰值强度为 2×106Wcm2。还分析了作为波长函数的非线性响应、响应饱和以及防止饱和的标准。
