Opt Express. 2023 Apr 24;31(9):14862-14872. doi: 10.1364/OE.488954.
In this work, bismuth doped fiber (BDF) and bismuth/phosphosilicate co-doped fiber (BPDF) were fabricated by atomic layer deposition (ALD) combined with the modified chemical vapor deposition (MCVD). The spectral characteristics are studied experimentally and the BPDF has good excitation effect covering the O band. A diode pumped BPDF amplifier with the gain over 20 dB from 1298-1348 nm (50 nm) has been demonstrated. The maximum gain of 30 dB was measured at 1320 nm with a gain coefficient of around 0.5 dB/m. Furthermore, we constructed different local structures through simulation and found that compared with the BDF, BPDF has a stronger excited state and a greater significance in O-band. This is mainly because phosphorus (P) doping changes the associated electron distribution and forms the bismuth-phosphorus active center. The fiber has a high gain coefficient, which is of great significance for the industrialization of O-band fiber amplifier.
在这项工作中，通过原子层沉积（ALD）与改进的化学气相沉积（MCVD）相结合，制备了铋掺杂光纤（BDF）和铋/磷硅共掺杂光纤（BPDF）。实验研究了其光谱特性，BPDF 具有良好的激发效果，覆盖了 O 波段。演示了一种二极管泵浦的 BPDF 放大器，其在 1298-1348nm（50nm）范围内的增益超过 20dB。在 1320nm 处测量到最大增益为 30dB，增益系数约为 0.5dB/m。此外，我们通过模拟构建了不同的局域结构，发现与 BDF 相比，BPDF 具有更强的激发态，在 O 波段具有更大的意义。这主要是因为磷（P）掺杂改变了相关的电子分布，并形成了铋-磷活性中心。该光纤具有较高的增益系数，这对 O 波段光纤放大器的工业化具有重要意义。
