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基于硒化铟纳米材料的可饱和吸收体在掺铒光纤激光器中的多孤子运转

Nanosized indium selenide saturable absorber for multiple solitons operation in Er-doped fiber laser.

出版信息

Opt Express. 2023 Mar 13;31(6):10176-10190. doi: 10.1364/OE.484219.

Abstract

With the advances in the field of ultrafast photonics occurring so fast, the demand for optical modulation devices with high performance and soliton lasers which can realize the evolution of multiple soliton pulses is gradually increasing. Nevertheless, saturable absorbers (SAs) with appropriate parameters and pulsed fiber lasers which can output abundant mode-locking states still need to be further explored. Due to the special band gap energy values of few-layer indium selenide (InSe) nanosheets, we have prepared a SA based on InSe on a microfiber by optical deposition. In addition, we demonstrate that our prepared SA possesses a modulation depth and saturable absorption intensity about 6.87% and 15.83 MW/cm, respectively. Then, multiple soliton states are obtained by dispersion management techniques, including regular solitons, and second-order harmonic mode-locking solitons. Meanwhile, we have obtained multi-pulse bound state solitons. We also provide theoretical basis for the existence of these solitons. The results of the experiment show that the InSe has the potential to be an excellent optical modulator because of its excellent saturable absorption properties. This work also is important for improving the understanding and knowledge of InSe and the output performance of fiber lasers.

摘要

随着超快光子学领域的快速发展,对具有高性能的光调制器件和能够实现多个孤子脉冲演化的孤子激光器的需求逐渐增加。然而,仍然需要进一步探索具有适当参数的可饱和吸收体 (SA) 和能够输出丰富锁模状态的脉冲光纤激光器。由于少层硒化铟 (InSe) 纳米片的特殊带隙能量值,我们通过光学沉积在微光纤上制备了基于 InSe 的 SA。此外,我们证明我们制备的 SA 具有约 6.87%和 15.83 MW/cm 的调制深度和饱和吸收强度。然后,通过色散管理技术获得了多孤子状态,包括规则孤子和二阶谐波锁模孤子。同时,我们还获得了多脉冲束缚态孤子。我们还为这些孤子的存在提供了理论依据。实验结果表明,由于其优异的饱和吸收特性,InSe 具有成为优秀光调制器的潜力。这项工作对于提高对 InSe 的理解和认识以及光纤激光器的输出性能也很重要。

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