Laser Derived Electron Transport Layers with Embedded p-n Heterointerfaces Enabling Planar Perovskite Solar Cells with Efficiency over 25.

Electron transport layers (ETLs) with pronounced electron conducting capability are essential for high performance planar perovskite photovoltaics, with the great challenge being that the most widely used metal oxide ETLs unfortunately have intrinsically low carrier mobility. Herein is demonstrated that by simply addressing the carrier loss at particle boundaries of TiO ETLs, through embedding in ETL p-n heterointerfaces, the electron mobility of the ETLs can be boosted by three orders of magnitude. Such embedding is encouragingly favorable for both inhibiting the formation of rutile phase TiO in ETL, and initiating the growth of high-quality perovskite films with less defect states. By virtue of these merits, creation of formamidinium lead iodide perovskite solar cells (PSCs) with a champion efficiency of 25.05% is achieved, setting a new benchmark for planar PSCs employing TiO ETLs. Unencapsulated PSCs deliver much-improved environmental stability, i.e., more than 80% of their initial efficiency after 9000 h of air storage under RH of 40%, and over 90% of their initial efficiency at maximum power point under continuous illumination for 500 h. Further work exploring other p-type nanocrystals for embedding warrants the proposed strategy as a universal alternative for addressing the low-carrier mobility of metal oxide based ETLs.