Yao Xingyu, Wang Rutao, Wu Lili, Song Haixiang, Zhao Jinbo, Liu Fei, Fu Kaili, Wang Zhou, Wang Fenglong, Liu Jiurong
Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education and School of Materials Science and Engineering, Shandong University, Jinan 250061, China.
Henan Joint International Research Laboratory of Nanocomposite Sensing Materials, School of Chemical and Environmental Engineering, Anyang Institute of Technology, Anyang 455000, China.
Materials (Basel). 2023 May 7;16(9):3577. doi: 10.3390/ma16093577.
Zinc hydroxyfluoride (ZnOHF) is a newly found resistive semiconductor used as a gas-sensing material with excellent selectivity to NO because of its unique energy band structure. In this paper, Al doping and UV radiation were used to further improve the gas-sensing performance of ZnOHF. The optimized 0.5 at.% Al-ZnOHF sample exhibits improved sensitivity to 10 ppm NO at a lower temperature (100 °C) under UV assistance, as well as a short response/recovery time (35 s/96 s). The gas-sensing mechanism demonstrates that Al doping increases electron concentration and promotes electron transfer of the nanorods by reducing the bandgap of ZnOHF, and the photogenerated electrons and holes with high activity under UV irradiation provide new reaction routes in the gas adsorption and desorption process, effectively promoting the gas-sensing process. The synergistic effect of Al and UV radiation contribute to the enhanced performance of Al-ZnOHF.
羟基氟化锌（ZnOHF）是一种新发现的电阻型半导体，由于其独特的能带结构，被用作对NO具有优异选择性的气敏材料。本文采用Al掺杂和紫外辐射进一步提高ZnOHF的气敏性能。优化后的0.5 at.% Al-ZnOHF样品在紫外光辅助下，在较低温度（100 °C）下对10 ppm NO表现出更高的灵敏度，以及较短的响应/恢复时间（35 s/96 s）。气敏机理表明，Al掺杂增加了电子浓度，并通过减小ZnOHF的带隙促进了纳米棒的电子转移，紫外光照射下具有高活性的光生电子和空穴在气体吸附和解吸过程中提供了新的反应途径，有效地促进了气敏过程。Al和紫外辐射的协同作用有助于提高Al-ZnOHF的性能。
