Department of Electronics Engineering, Chungnam National University, Daejeon, South Korea.
Department of Chemical Engineering, Sri Sivasubramaniya Nadar College of Engineering, Chennai, 603110, India.
Chemosphere. 2021 Dec;284:131287. doi: 10.1016/j.chemosphere.2021.131287. Epub 2021 Jun 23.
Gas sensors fabricated using In-Ga-Zn oxide (IGZO) thin films doped with Fluorine (F) were used to detect nitrogen dioxide (NO) gas. IGZO films with a thickness of 250 nm were deposited onto SiO/Si substrates via radio-frequency magnetron sputtering, followed by F-doping by an ion-implantation procedure with implant energy of 45 keV and a dose of 3 × 10 ions/cm. The NO gas detection performance of the fabricated thin-film sensors was tested at various temperatures and NO concentrations. The F-doped IGZO (F-IGZO) sensor showed high NO gas sensitivity: the ratio between the responses to NO and air (R/R) was 590 at 250 °C and 100 ppm NO gas concentration. F-IGZO sensor showed superior selectivity toward NO over other gases. The stability of the sensor was also investigated; the sensor was observed to exhibit stable performance for 2 weeks.
采用掺氟（F）的铟镓锌氧化物（IGZO）薄膜制造的气体传感器可用于检测二氧化氮（NO）气体。通过射频磁控溅射在 SiO2/Si 衬底上沉积了 250nm 厚的 IGZO 薄膜，然后通过离子注入程序进行 F 掺杂，注入能量为 45keV，剂量为 3×1015 离子/cm。在不同温度和 NO 浓度下测试了所制备的薄膜传感器对 NO 气体的检测性能。F 掺杂的 IGZO（F-IGZO）传感器表现出高的 NO 气体灵敏度：在 250°C 和 100ppmNO 气体浓度下，对 NO 和空气的响应比（R/R）为 590。F-IGZO 传感器对 NO 气体具有优于其他气体的选择性。还研究了传感器的稳定性；观察到传感器在 2 周内表现出稳定的性能。
