掺氟铟镓锌氧化物（IGZO）化学电阻传感器用于高响应的 NO 检测。

Fluorine-implanted indium-gallium-zinc oxide (IGZO) chemiresistor sensor for high-response NO detection.

机构信息

Department of Electronics Engineering, Chungnam National University, Daejeon, South Korea.

Department of Chemical Engineering, Sri Sivasubramaniya Nadar College of Engineering, Chennai, 603110, India.

出版信息

Chemosphere. 2021 Dec;284:131287. doi: 10.1016/j.chemosphere.2021.131287. Epub 2021 Jun 23.

DOI:10.1016/j.chemosphere.2021.131287

PMID:34214931

Abstract

Gas sensors fabricated using In-Ga-Zn oxide (IGZO) thin films doped with Fluorine (F) were used to detect nitrogen dioxide (NO) gas. IGZO films with a thickness of 250 nm were deposited onto SiO/Si substrates via radio-frequency magnetron sputtering, followed by F-doping by an ion-implantation procedure with implant energy of 45 keV and a dose of 3 × 10 ions/cm. The NO gas detection performance of the fabricated thin-film sensors was tested at various temperatures and NO concentrations. The F-doped IGZO (F-IGZO) sensor showed high NO gas sensitivity: the ratio between the responses to NO and air (R/R) was 590 at 250 °C and 100 ppm NO gas concentration. F-IGZO sensor showed superior selectivity toward NO over other gases. The stability of the sensor was also investigated; the sensor was observed to exhibit stable performance for 2 weeks.

摘要

采用掺氟（F）的铟镓锌氧化物（IGZO）薄膜制造的气体传感器可用于检测二氧化氮（NO）气体。通过射频磁控溅射在 SiO2/Si 衬底上沉积了 250nm 厚的 IGZO 薄膜，然后通过离子注入程序进行 F 掺杂，注入能量为 45keV，剂量为 3×1015 离子/cm。在不同温度和 NO 浓度下测试了所制备的薄膜传感器对 NO 气体的检测性能。F 掺杂的 IGZO（F-IGZO）传感器表现出高的 NO 气体灵敏度：在 250°C 和 100ppmNO 气体浓度下，对 NO 和空气的响应比（R/R）为 590。F-IGZO 传感器对 NO 气体具有优于其他气体的选择性。还研究了传感器的稳定性；观察到传感器在 2 周内表现出稳定的性能。