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强电子-声子耦合介导了BiFeO中的载流子输运。

Strong Electron-Phonon Coupling Mediates Carrier Transport in BiFeO.

作者信息

Ou Zhenwei, Peng Bin, Chu Weibin, Li Zhe, Wang Cheng, Zeng Yan, Chen Hongyi, Wang Qiuyu, Dong Guohua, Wu Yongyi, Qiu Ruibin, Ma Li, Zhang Lili, Liu Xiaoze, Li Tao, Yu Ting, Hu Zhongqiang, Wang Ti, Liu Ming, Xu Hongxing

机构信息

School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.

Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.

出版信息

Adv Sci (Weinh). 2023 Aug;10(22):e2301057. doi: 10.1002/advs.202301057. Epub 2023 May 23.

DOI:10.1002/advs.202301057
PMID:37218529
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10401121/
Abstract

The electron-phonon interaction is known as one of the major mechanisms determining electrical and thermal properties. In particular, it alters the carrier transport behaviors and sets fundamental limits to carrier mobility. Establishing how electrons interact with phonons and the resulting impact on the carrier transport property is significant for the development of high-efficiency electronic devices. Here, carrier transport behavior mediated by the electron-phonon coupling in BiFeO epitaxial thin films is directly observed. Acoustic phonons are generated by the inverse piezoelectric effect and coupled with photocarriers. Via the electron-phonon coupling, doughnut shape carrier distribution has been observed due to the coupling between hot carriers and phonons. The hot carrier quasi-ballistic transport length can reach 340 nm within 1 ps. The results suggest an effective approach to investigating the effects of electron-phonon interactions with temporal and spatial resolutions, which is of great importance for designing and improving electronic devices.

摘要

电子-声子相互作用是决定电学和热学性质的主要机制之一。特别是,它改变了载流子输运行为,并对载流子迁移率设定了基本限制。确定电子如何与声子相互作用以及由此对载流子输运性质产生的影响,对于高效电子器件的发展具有重要意义。在此,直接观察到了BiFeO外延薄膜中由电子-声子耦合介导的载流子输运行为。声子通过逆压电效应产生并与光载流子耦合。通过电子-声子耦合,由于热载流子与声子之间的耦合,观察到了甜甜圈形状的载流子分布。热载流子准弹道输运长度在1皮秒内可达到340纳米。这些结果表明了一种以时间和空间分辨率研究电子-声子相互作用影响的有效方法,这对于设计和改进电子器件非常重要。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6e51/10401121/717a992a08bb/ADVS-10-2301057-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6e51/10401121/9bc4ad8d28bc/ADVS-10-2301057-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6e51/10401121/1d7e48ffe7a0/ADVS-10-2301057-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6e51/10401121/d072024aa76c/ADVS-10-2301057-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6e51/10401121/717a992a08bb/ADVS-10-2301057-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6e51/10401121/9bc4ad8d28bc/ADVS-10-2301057-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6e51/10401121/1d7e48ffe7a0/ADVS-10-2301057-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6e51/10401121/d072024aa76c/ADVS-10-2301057-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6e51/10401121/717a992a08bb/ADVS-10-2301057-g001.jpg

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本文引用的文献

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Subpicosecond Optical Stress Generation in Multiferroic BiFeO.多铁性BiFeO₃中的亚皮秒光应力产生
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