Insight into the structural, optoelectronic, and thermoelectric properties of FeHfSi Heusler by DFT investigation.

At high pressure, the pressure dependencies of the structural, electronic, optical, and thermoelectric properties of FeHfSi Heusler were calculated using the FP-LAPW method within the framework of the density functional theory. The calculations were carried out using the modified Becke-Johnson (mBJ) scheme. Our calculations showed that the Born mechanical stability criteria confirmed the mechanical stability in the cubic phase. Further, through Poisson and Pugh's ratios critical limits, the findings of the ductile strength were computed. At a pressure of 0 GPa, the indirect nature of the material may be deduced from the electronic band structures of FeHfSi as well as the estimations for its density of states. Under pressure, the real and imaginary dielectric function responses, optical conductivity, absorption coefficient, energy loss function, refractive index, reflectivity, and extinction coefficient were computed in the 0-12 eV range. Using semi-classical Boltzmann theory, a thermal response is also studied. As the pressure rises, the Seebeck coefficient decreases, while the electrical conductivity rises. The figure of merit () and Seebeck coefficients were determined at temperatures of 300 K, 600 K, 900 K, and 1200 K in order to better understand the thermoelectric properties of a material at these different temperatures. Despite the fact that the ideal Seebeck coefficient for FeHfSi was discovered at 300 K and was determined to be superior to that reported previously. Materials with a thermoelectric reaction has been shown to be suitable for reusing waste heat in systems. As a result, FeHfSi functional material may aid in the development of new energy harvesting and optoelectronic technologies.