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具有分数阶热时间导数的微伸长半导体介质在旋转场中的热光学机械波。

Thermal-optical mechanical waves of the microelongated semiconductor medium with fractional order heat time derivatives in a rotational field.

机构信息

Department of Mathematics, College of Science, Taibah University, P.O. Box 344, Al-Madinah Al-Munawarah,, 30002, Saudi Arabia.

Department of Mathematical Sciences, College of Science, Princess Nourah bint Abdulrahman University, P. O. Box 84428, Riyadh, 11671, Saudi Arabia.

出版信息

Sci Rep. 2023 May 29;13(1):8698. doi: 10.1038/s41598-023-35497-7.

DOI:10.1038/s41598-023-35497-7
PMID:37248252
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10227024/
Abstract

Outlined here is an innovative method for characterizing a layer of microelongated semiconductor material under excitation. Fractional time derivatives of a heat equation with a rotational field are used to probe the model during photo-excitation processes. Micropolar-thermoelasticity theory, which the model implements, introduces the microelongation scalar function to characterize the processes occurring inside the microelements. When the microelongation parameters are considered following the photo-thermoelasticity theory, the model investigates the interaction scenario between optical-thermo-mechanical waves under the impact of rotation parameters. During electronic and thermoelastic deformation, the key governing equations have been reduced to dimensionless form. Laplace and Fourier's transformations are used to solve this mathematical problem. Isotropic, homogeneous, and linear microelongated semiconductor medium's general solutions to their respective fundamental fields are derived in two dimensions (2D). To get complete solutions, several measurements must be taken at the free surface of the medium. As an example of numerical modeling of the important fields, we will use the silicon (Si) material's physicomechanical characteristics. Several comparisons were made using different values of relaxation time and rotation parameters, and the results were graphically shown.

摘要

这里概述了一种用于在激励下对微伸长半导体材料层进行特征描述的创新方法。使用具有旋转场的热方程的分数时间导数来探测模型在光激发过程中的情况。模型所采用的微极热弹性理论引入了微伸长标量函数来描述微元内部发生的过程。当按照光热弹性理论考虑微伸长参数时,该模型研究了在旋转参数影响下光-热-机械波之间的相互作用场景。在电子和热弹性变形过程中,关键控制方程已被简化为无量纲形式。使用拉普拉斯和傅里叶变换来解决这个数学问题。各向同性、均匀和线性微伸长半导体介质在二维(2D)下对其各自基本场的一般解。为了得到完整的解,必须在介质的自由表面进行多次测量。作为对重要场数值建模的示例,我们将使用硅(Si)材料的物理力学特性。使用不同的弛豫时间和旋转参数进行了多次比较,并以图形方式显示了结果。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/53f8/10227024/545dbe299819/41598_2023_35497_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/53f8/10227024/392443798656/41598_2023_35497_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/53f8/10227024/e9dd02ae471d/41598_2023_35497_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/53f8/10227024/1eac4a6d7986/41598_2023_35497_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/53f8/10227024/545dbe299819/41598_2023_35497_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/53f8/10227024/392443798656/41598_2023_35497_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/53f8/10227024/e9dd02ae471d/41598_2023_35497_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/53f8/10227024/1eac4a6d7986/41598_2023_35497_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/53f8/10227024/545dbe299819/41598_2023_35497_Fig4_HTML.jpg

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本文引用的文献

1
A novel model for photothermal excitation of variable thermal conductivity semiconductor elastic medium subjected to mechanical ramp type with two-temperature theory and magnetic field.一种基于双温度理论和磁场的、用于光热激发变热导率半导体弹性介质且受机械斜坡型作用的新型模型。
Sci Rep. 2019 Mar 1;9(1):3319. doi: 10.1038/s41598-019-39955-z.