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介孔半导体 BiSe 薄膜。

Mesoporous Semiconductive BiSe Films.

机构信息

School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology (AIBN), The University of Queensland, Brisbane, Queensland 4072, Australia.

Department of Materials Process Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan.

出版信息

Nano Lett. 2023 Jun 28;23(12):5424-5429. doi: 10.1021/acs.nanolett.3c00183. Epub 2023 Jun 8.

DOI:10.1021/acs.nanolett.3c00183
PMID:37289968
Abstract

BiSe is a semiconductive material possessing a bandgap of 0.3 eV, and its unique band structure has paved the way for diverse applications. Herein, we demonstrate a robust platform for synthesizing mesoporous BiSe films with uniform pore sizes via electrodeposition. Block copolymer micelles act as soft templates in the electrolyte to create a 3D porous nanoarchitecture. By controlling the length of the block copolymer, the pore size is adjusted to 9 and 17 nm precisely. The nonporous BiSe film exhibits a tunneling current in a vertical direction of 52.0 nA, but upon introducing porosity (9 nm pores), the tunneling current increases significantly to 684.6 nA, suggesting that the conductivity of BiSe films is dependent on the pore structure and surface area. The abundant porous architecture exposes a larger surface area of BiSe to the surrounding air within the same volume, thereby augmenting its metallic properties.

摘要

BiSe 是一种半导体材料,具有 0.3eV 的带隙,其独特的能带结构为各种应用铺平了道路。在此,我们通过电沉积展示了一种合成具有均匀孔径的介孔 BiSe 薄膜的稳健平台。嵌段共聚物胶束在电解质中充当软模板,形成 3D 多孔纳米结构。通过控制嵌段共聚物的长度,可以精确地将孔径调整为 9nm 和 17nm。无孔 BiSe 薄膜在垂直方向上表现出 52.0nA 的隧道电流,但引入孔隙(9nm 孔隙)后,隧道电流显著增加到 684.6nA,表明 BiSe 薄膜的电导率取决于孔结构和表面积。丰富的多孔结构在相同体积内将更大的 BiSe 表面积暴露于周围空气中,从而增强其金属性质。

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