Barettin Daniele, Shtrom Igor V, Reznik Rodion R, Cirlin George E
Department of Electronic Engineering, Università Niccoló Cusano, 00133 Rome, Italy.
Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia.
Nanomaterials (Basel). 2023 May 25;13(11):1737. doi: 10.3390/nano13111737.
We present a study with a numerical model based on k→·p→, including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots, in particular the thickness, are obtained from experimental data measured by our group. We also present a comparison between the experimental and numerically calculated spectra to support the validity of our model.
我们展示了一项基于k→·p→的数值模型的研究，该模型包括电磁场，用于评估嵌入直接带隙AlGaAs纳米线中的单个GaAs量子点的机电和光电特性。量子点的几何形状和尺寸，特别是厚度，是从我们团队测量的实验数据中获得的。我们还对实验光谱和数值计算光谱进行了比较，以支持我们模型的有效性。
