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由锗烯和砷化锑单层构建的横向异质结构中的半导体和拓扑相。

Semiconductor and topological phases in lateral heterostructures constructed from germanene and AsSb monolayers.

作者信息

Ha Chu Viet, Nguyen Thi Bich Ngoc, Trang Pham Quynh, Ponce-Pérez R, Kim Lien Vu Thi, Guerrero-Sanchez J, Hoat D M

机构信息

Faculty of Physics, TNU-University of Education Thai Nguyen Vietnam.

Institute of Physics, Vietnam Academy of Science and Technology 18 Hoang Quoc Viet, Cau Giay Hanoi Vietnam.

出版信息

RSC Adv. 2023 Jun 13;13(26):17968-17977. doi: 10.1039/d3ra01867a. eCollection 2023 Jun 9.

DOI:10.1039/d3ra01867a
PMID:37323461
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10263102/
Abstract

Two-dimensional (2D) heterostructures have attracted a lot of attention due to their novel properties induced by the synergistic effects of the constituent building blocks. In this work, new lateral heterostructures (LHSs) formed by stitching germanene and AsSb monolayers are investigated. First-principles calculations assert the semimetal and semiconductor characters of 2D germanene and AsSb, respectively. The non-magnetic nature is preserved by forming LHSs along the armchair direction, where the band gap of the germanene monolayer can be increased to 0.87 eV. Meanwhile, magnetism may emerge in the zigzag-interline LHSs depending on the chemical composition. Such that, total magnetic moments up to 0.49 can be obtained, being produced mainly at the interfaces. The calculated band structures show either topological gap or gapless protected interface states, with quantum spin-valley Hall effects and Weyl semimetal characters. The results introduce new lateral heterostructures with novel electronic and magnetic properties, which can be controlled by the interline formation.

摘要

二维（2D）异质结构因其组成构建块的协同效应所诱导的新颖特性而备受关注。在这项工作中，对通过拼接锗烯和砷化锑单层形成的新型横向异质结构（LHSs）进行了研究。第一性原理计算表明二维锗烯和砷化锑分别具有半金属和半导体特性。沿着扶手椅方向形成LHSs时，非磁性得以保留，此时锗烯单层的带隙可增加至0.87电子伏特。同时，取决于化学成分，锯齿形线间LHSs中可能会出现磁性。如此一来，可获得高达0.49的总磁矩，主要在界面处产生。计算得到的能带结构显示出拓扑能隙或无隙受保护的界面态，具有量子自旋谷霍尔效应和外尔半金属特性。这些结果引入了具有新颖电子和磁性特性的新型横向异质结构，其可通过线间形成来控制。

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