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通过选择性分子相互作用调控锡铅钙钛矿太阳能电池中的组分分布

Component Distribution Regulation in Sn-Pb Perovskite Solar Cells through Selective Molecular Interaction.

作者信息

Zhang Wenxiao, Yuan Haobo, Li Xiaodong, Guo Xuemin, Lu Chunyan, Liu Acan, Yang Hui, Xu Lin, Shi Xueliang, Fang Zhiwei, Yang Haibo, Cheng Ya, Fang Junfeng

机构信息

School of Physics and Electronic Science, Engineering Research Center of Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal University, Shanghai, 200241, China.

Shanghai Key Laboratory of Green Chemistry and Chemical Processes, School of Chemistry and Molecular Engineering, East China Normal University, 3663 North Zhongshan Road, Shanghai, 200062, China.

出版信息

Adv Mater. 2023 Sep;35(39):e2303674. doi: 10.1002/adma.202303674. Epub 2023 Jul 28.

DOI:10.1002/adma.202303674
PMID:37325993
Abstract

Tin-lead (Sn-Pb) perovskite solar cells (PSCs) with near-ideal bandgap still lag behind the pure lead PSCs. Disordered heterojunctions caused by inhomogeneous Sn/Pb ratio in the binary perovskite film induce large recombination loss. Here, an Sn-Pb perovskite film is reported with homogeneous component and energy distribution by introducing hydrazine sulfate (HS) in Sn perovskite precursor. HS can form hydrogen bond network and coordinate with FASnI thus no longer bond with Pb , which reduces the crystallization rate of tin perovskite to the level of lead analog. The strong bonding between SO and Sn can also suppress its oxidation. As a result, the Sn-Pb PSCs with HS exhibit a significantly improved V of 0.91 V along with a high efficiency of 23.17%. Meanwhile, the hydrogen bond interaction network, strong bonding between Sn and sulfate ion also improve the thermal, storage, and air stability of resulting devices.

摘要

具有接近理想带隙的锡铅(Sn-Pb)钙钛矿太阳能电池(PSC)仍落后于纯铅PSC。二元钙钛矿薄膜中不均匀的Sn/Pb比导致的无序异质结会引起较大的复合损失。在此,通过在Sn钙钛矿前驱体中引入硫酸肼(HS),报道了一种具有均匀成分和能量分布的Sn-Pb钙钛矿薄膜。HS可以形成氢键网络并与FASnI配位,从而不再与Pb结合,这将锡钙钛矿的结晶速率降低到铅类似物的水平。SO与Sn之间的强键合也可以抑制其氧化。结果,具有HS的Sn-Pb PSC表现出显著提高的0.91 V的V,以及23.17%的高效率。同时,氢键相互作用网络、Sn与硫酸根离子之间的强键合也提高了所得器件的热稳定性、存储稳定性和空气稳定性。

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