Institute of Physics, University of Opole, Oleska 48, 45-052, Opole, Poland.
Phys Rev E. 2023 May;107(5-1):054141. doi: 10.1103/PhysRevE.107.054141.
We study the effect of disorder on the excitons in a semiconductor with screened Coulomb interaction. Examples are polymeric semiconductors and/or van der Waals structures. In the screened hydrogenic problem, we consider the disorder phenomenologically using the so-called fractional Scrödinger equation. Our main finding is that joint action of screening and disorder either destroys the exciton (strong screening) or enhances the bounding of electron and hole in an exciton, leading to its collapse in the extreme case. Latter effects may also be related to the quantum manifestations of chaotic exciton behavior in the above semiconductor structures. Hence, they should be considered in device applications, where the interplay between dielectric screening and disorder is important. Our theoretical results permit one to predict the various excitonic properties in semiconductor samples with different degrees of disorder and Coulomb interaction screenings.
我们研究了屏蔽库仑相互作用下半导体中无序对激子的影响。这些例子包括聚合物半导体和/或范德华结构。在屏蔽的类氢问题中，我们使用所谓的分数薛定谔方程从唯象上考虑无序。我们的主要发现是，屏蔽和无序的共同作用要么破坏激子（强屏蔽），要么增强激子中电子和空穴的束缚，在极端情况下导致激子崩溃。后一种效应也可能与上述半导体结构中混沌激子行为的量子表现有关。因此，在器件应用中应该考虑这些效应，其中介电屏蔽和无序的相互作用很重要。我们的理论结果允许人们预测具有不同程度无序和库仑相互作用屏蔽的半导体样品的各种激子性质。
