Shi Xiuqi, Li Wenfei, Lan Xinhui, Guo Qianqian, Zhu Guangpeng, Du Wei, Wang Tao
Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China.
Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China.
Small. 2023 Oct;19(43):e2301949. doi: 10.1002/smll.202301949. Epub 2023 Jun 25.
Transition metal dichalcogenide (TMD)-based 2D monolayer semiconductors, with the direct bandgap and the large exciton binding energy, are widely studied to develop miniaturized optoelectronic devices, e.g., nanoscale light-emitting diodes (LEDs). However, in terms of polarization control, it is still quite challenging to realize polarized electroluminescence (EL) from TMD monolayers, especially at room temperature. Here, by using Ag nanowire top electrode, polarized LEDs are demonstrated based on 2D monolayer semiconductors (WSe , MoSe , and WS ) at room temperature with a degree of polarization (DoP) ranging from 50% to 63%. The highly anisotropic EL emission comes from the 2D/Ag interface via the electron/hole injection and recombination process, where the EL emission is also enhanced by the polarization-dependent plasmonic resonance of the Ag nanowire. These findings introduce new insights into the design of polarized 2D LED devices at room temperature and may promote the development of miniaturized 2D optoelectronic devices.
基于过渡金属二硫属化物(TMD)的二维单层半导体,具有直接带隙和大的激子结合能,被广泛研究用于开发小型化光电器件,例如纳米级发光二极管(LED)。然而,在偏振控制方面,要实现TMD单层的偏振电致发光(EL)仍然极具挑战性,尤其是在室温下。在此,通过使用银纳米线顶部电极,在室温下基于二维单层半导体(WSe₂、MoSe₂和WS₂)展示了偏振LED,其偏振度(DoP)范围为50%至63%。高度各向异性的EL发射通过电子/空穴注入和复合过程来自二维/银界面,其中EL发射也因银纳米线的偏振相关等离子体共振而增强。这些发现为室温下偏振二维LED器件的设计带来了新见解,并可能促进小型化二维光电器件的发展。