Zhu Yi, Wang Bowen, Li Ziyuan, Zhang Jian, Tang Yilin, Torres Juan F, Lipiński Wojciech, Fu Lan, Lu Yuerui
Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, ACT, 2601, Australia.
Department of Electronic Materials Engineering, Research School of Physics and Engineering, the Australian National University, Canberra, ACT, 2601, Australia.
Adv Mater. 2021 Jul;33(29):e2101375. doi: 10.1002/adma.202101375. Epub 2021 Jun 6.
High-efficiency and wavelength-tunable light-emitting diode (LED) devices will play an important role in future advanced optoelectronic systems. Traditional semiconductor LED devices typically have a fixed emission wavelength that is determined by the energy of the emission states. Here, a novel high-efficiency and wavelength-tunable monolayer WS LED device, which operates in the hybrid mode of continuous-pulsed injection, is developed. This hybrid injection enables highly enhanced emission efficiency (>20 times) and effective size of emission area (>5 times) at room temperature. The emission wavelength of the WS monolayer LED device can be tuned over more than 40 nm by driving AC voltages, from exciton emission to trion emission, and further to defect emission. The quantum efficiency of defect electroluminescence (EL) emission is measured to be more than 24.5 times larger than that from free exciton and trion EL emission. The separate carrier injection in the LED also demonstrates advantages in allowing defect species to be visualized and distinguished in real space. Those defects are assigned to be negatively charged defects. The results open a new route to develop high-performance and wavelength-tunable LED devices for future advanced optoelectronic applications.
高效且波长可调的发光二极管(LED)器件将在未来先进的光电子系统中发挥重要作用。传统的半导体LED器件通常具有由发射态能量决定的固定发射波长。在此,开发了一种新型的高效且波长可调的单层WS LED器件,其以连续脉冲注入的混合模式工作。这种混合注入在室温下能够实现发射效率的高度增强(>20倍)和发射区域有效尺寸的增大(>5倍)。通过施加交流电压,WS单层LED器件的发射波长可在超过40纳米的范围内进行调谐,从激子发射到三重激子发射,再到缺陷发射。测得缺陷电致发光(EL)发射的量子效率比自由激子和三重激子EL发射的量子效率大24.5倍以上。LED中的单独载流子注入还显示出在允许缺陷种类在真实空间中可视化和区分方面的优势。这些缺陷被确定为带负电荷的缺陷。这些结果为开发用于未来先进光电子应用的高性能且波长可调的LED器件开辟了一条新途径。