Tan Clement Kok Yong, Fu Wei, Loh Kian Ping
NUS Graduate School - Integrative Sciences & Engineering Programme (ISEP), National University of Singapore, Singapore 117543, Singapore.
Institute of Materials Research and Engineering (IMRE) Agency for Science, Technology and Research (A*STAR) 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
Chem Rev. 2023 Jul 12;123(13):8701-8717. doi: 10.1021/acs.chemrev.3c00129. Epub 2023 Jun 26.
Two-dimensional indium(III) selenide (InSe) is characterized by rich polymorphism and offers the prospect of overcoming thickness-related depolarization effects in conventional ferroelectrics. α-InSe has attracted attention as a ferroelectric semiconductor that can retain ferroelectricity at the monolayer level; thus, it can be potentially deployed in high density memory switching modes that bypasses the traditional von Neumann architecture in device design. However, studies involving α-InSe are often hindered by difficulties in phase identification owing to mixing with β-InSe. β-InSe has several polymorphs, among which include the antiferroelectric and ferroelastic β'-InSe. It is important to understand polymorph transitions and crystal-amorphous phase transitions in β-InSe to tap into the potential of this material for resistive memory storage. In this review, we discuss how the various polymorphs and polytypes of InSe can be rigorously differentiated and further highlight recent applications of these phases in ferroelectrics and memory devices.
二维硒化铟（InSe）具有丰富的多晶型性，有望克服传统铁电体中与厚度相关的去极化效应。α-InSe作为一种能在单层水平保持铁电性的铁电半导体受到关注；因此，它有可能被应用于高密度存储开关模式，在器件设计中绕过传统的冯·诺依曼架构。然而，由于与β-InSe混合，涉及α-InSe的研究常常受到相鉴定困难的阻碍。β-InSe有几种多晶型，其中包括反铁电和铁弹性β'-InSe。了解β-InSe中的多晶型转变和晶体-非晶相转变对于挖掘这种材料在电阻式存储器存储方面的潜力很重要。在这篇综述中，我们讨论了如何严格区分InSe的各种多晶型和多型，并进一步强调了这些相在铁电体和存储器件中的最新应用。
