Liu Xiaonan, Wang Lei, Gao Yan, Zeng Yicheng, Liu Fangze, Shen Huaibin, Manna Liberato, Li Hongbo
Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China.
Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng 475004, People's Republic of China.
Nano Lett. 2023 Jul 26;23(14):6689-6697. doi: 10.1021/acs.nanolett.3c01919. Epub 2023 Jul 5.
Quantum dot (QD) based light-emitting diodes (QLEDs) hold great promise for next-generation lighting and displays. In order to reach a wide color gamut, deep red QLEDs emitting at wavelengths beyond 630 nm are highly desirable but have rarely been reported. Here, we synthesized deep red emitting ZnCdSe/ZnSeS QDs (diameter ∼16 nm) with a continuous gradient bialloyed core-shell structure. These QDs exhibit high quantum yield, excellent stability, and a reduced hole injection barrier. The QLEDs based on ZnCdSe/ZnSeS QDs have an external quantum efficiency above 20% in the luminance range of 200-90000 cd m and a record operation lifetime (time for the luminance to decrease to 95% of its initial value) of more than 20000 h at a luminance of 1000 cd m. Furthermore, the ZnCdSe/ZnSeS QLEDs have outstanding shelf stability (>100 days) and cycle stability (>10 cycles). The reported QLEDs with excellent stability and durability can accelerate the pace of QLED applications.
基于量子点(QD)的发光二极管(QLED)在下一代照明和显示领域具有巨大潜力。为了实现宽色域,发射波长超过630 nm的深红色QLED非常理想,但鲜有报道。在此,我们合成了具有连续梯度双合金核壳结构的深红色发光ZnCdSe/ZnSeS量子点(直径约16 nm)。这些量子点具有高量子产率、出色的稳定性以及降低的空穴注入势垒。基于ZnCdSe/ZnSeS量子点的QLED在200 - 90000 cd m的亮度范围内具有高于20%的外量子效率,在1000 cd m的亮度下具有超过20000小时的创纪录工作寿命(亮度降至初始值95%的时间)。此外,ZnCdSe/ZnSeS QLED具有出色的储存稳定性(>100天)和循环稳定性(>10次循环)。所报道的具有出色稳定性和耐久性的QLED能够加快QLED应用的步伐。