Jiang Xiaojie, Fan Zhen, Luo Li, Wang Lishuang
School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China.
Guangxi Key Lab of Processing for Nonferrous Metals and Featured Materials and Key Lab of New Processing Technology for Nonferrous Metals and Materials, Nanning 530004, China.
Micromachines (Basel). 2022 Apr 30;13(5):709. doi: 10.3390/mi13050709.
Light-emitting diodes based on colloidal quantum dots (QLEDs) show a good prospect in commercial application due to their narrow spectral linewidths, wide color range, excellent luminance efficiency, and long operating lifetime. However, the toxicity of heavy-metal elements, such as Cd-based QLEDs or Pb-based perovskite QLEDs, with excellent performance, will inevitably pose a serious threat to people's health and the environment. Among heavy-metal-free materials, InP quantum dots (QDs) have been paid special attention, because of their wide emission, which can, in principle, be tuned throughout the whole visible and near-infrared range by changing their size, and InP QDs are generally regarded as one of the most promising materials for heavy-metal-free QLEDs for the next generation displays and solid-state lighting. In this review, the great progress of QLEDs, based on the fundamental structure and photophysical properties of InP QDs, is illustrated systematically. In addition, the remarkable achievements of QLEDs, based on their modification of materials, such as ligands exchange of InP QDs, and the optimization of the charge transport layer, are summarized. Finally, an outlook is shown about the challenge faced by QLED, as well as possible pathway to enhancing the device performance. This review provides an overview of the recent developments of InP QLED applications and outlines the challenges for achieving the high-performance devices.
基于胶体量子点的发光二极管（QLED）因其谱线宽度窄、色域广、发光效率高和工作寿命长而在商业应用中展现出良好前景。然而，性能优异的基于镉的QLED或基于铅的钙钛矿QLED等重金属元素的毒性，将不可避免地对人类健康和环境构成严重威胁。在无重金属材料中，磷化铟量子点（QDs）受到了特别关注，因为它们的发射光谱很宽，原则上可以通过改变尺寸在整个可见光和近红外范围内进行调节，并且磷化铟量子点通常被认为是下一代显示器和固态照明无重金属QLED最有前途的材料之一。在这篇综述中，基于磷化铟量子点的基本结构和光物理性质，系统地阐述了QLED取得的重大进展。此外，总结了基于材料改性（如磷化铟量子点的配体交换）以及电荷传输层优化的QLED所取得的显著成果。最后，展望了QLED面临的挑战以及提高器件性能的可能途径。这篇综述概述了磷化铟QLED应用的最新进展，并概述了实现高性能器件所面临的挑战。
