Zhang Xiaopeng, Xu Wen-Huang, Zheng Wenwei, Su Sheng-Qun, Huang Yu-Bo, Shui Qirui, Ji Tianchi, Uematsu Mikoto, Chen Qian, Tokunaga Masashi, Gao Kaige, Okazawa Atsushi, Kanegawa Shinji, Wu Shu-Qi, Sato Osamu
Institute for Materials Chemistry and Engineering and IRCCS, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan.
Institute for Solid State Physics, The University of Tokyo, Kashiwa, 277-8581, Japan.
J Am Chem Soc. 2023 Jul 26;145(29):15647-15651. doi: 10.1021/jacs.3c02977. Epub 2023 Jul 18.
Molecular-based magnetoelectric materials are among the most promising materials for next-generation magnetoelectric memory devices. However, practical application of existing molecular systems has proven difficult largely because the polarization change is far lower than the practical threshold of the ME memory devices. Herein, we successfully obtained an [FeCo] dinuclear complex that exhibits a magnetic field-induced spin crossover process, resulting in a significant polarization change of 0.45 μC cm. Mössbauer spectroscopy and theoretical calculations suggest that the asymmetric structural change, coupled with electron redistribution, leads to the observed polarization change. Our approach provides a new strategy toward rationally enhancing the polarization change.
基于分子的磁电材料是下一代磁电存储器件最有前途的材料之一。然而，现有分子体系的实际应用已被证明很困难，主要是因为极化变化远低于磁电存储器件的实际阈值。在此，我们成功获得了一种[FeCo]双核配合物，它表现出磁场诱导的自旋交叉过程，导致显著的极化变化为0.45 μC/cm²。穆斯堡尔光谱和理论计算表明，不对称结构变化与电子重新分布相结合，导致了观察到的极化变化。我们的方法为合理增强极化变化提供了一种新策略。
