Fan Zhengyang, Wang Jiayi, He Linlin, Shen Bo, Chen Jie, Mao Huaming, Ren Yu, Yin Jungang, Cui Hao, Yang Hongwei
State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming, 650106 Yunnan, People's Republic of China.
Advanced Materials Thrust, the Hong Kong University of Science and Technology (GZ), 510000 Guang Zhou, People's Republic of China.
Langmuir. 2023 Aug 1;39(30):10651-10659. doi: 10.1021/acs.langmuir.3c01264. Epub 2023 Jul 21.
Silver nanowires (AgNWs) have gained significant attention from researchers as a promising material for producing flexible transparent conductive films, which can be utilized in touch and display screens. Thereinto, the ultrahigh aspect ratio AgNW network can theoretically decrease the contact resistance effectively while still retaining considerable mechanical and optical properties. However, fabrication of high-quality AgNWs with a fine diameter and high aspect ratio is still challenging. Herein, a simple and robust approach to synthesize ultrahigh aspect ratio AgNWs is presented. This study successfully fabricated AgNWs with the highest aspect ratio up to ∼4000 and an average length of ∼72 μm by utilizing tetrabutylammonium tribromide as an auxiliary additive. The manifestation of tetrabutylammonium tribromide was proven to be beneficial for the generation of silver seeds and the expansion of AgNWs. The obtained AgNWs were utilized to create a transparent conductive film that showed low sheet resistance of 22.4 Ω/sq and high transmittance and low haze of 87.71 and 4.15%, respectively. The transmittance and haze of the vacant poly(ethylene terephthalate) support were 90.13 and 2.05%, thereby offering great potential for application in flexible transparent electrodes.
银纳米线(AgNWs)作为一种用于制备可用于触摸和显示屏的柔性透明导电薄膜的有前途的材料,已引起研究人员的广泛关注。其中,超高纵横比的AgNW网络理论上可以有效降低接触电阻,同时仍保留相当的机械和光学性能。然而,制备具有细直径和高纵横比的高质量AgNWs仍然具有挑战性。在此,提出了一种简单而稳健的合成超高纵横比AgNWs的方法。本研究通过使用三溴化四丁基铵作为辅助添加剂,成功制备了纵横比高达约4000且平均长度约为72μm的AgNWs。事实证明,三溴化四丁基铵的作用有利于银种子的生成和AgNWs的生长。所制备的AgNWs被用于制备透明导电薄膜,该薄膜的方阻低至22.4Ω/sq,具有87.71%的高透过率和4.15%的低雾度。空白聚对苯二甲酸乙二酯载体的透过率和雾度分别为90.13%和2.05%,从而在柔性透明电极应用方面具有巨大潜力。