Suppr超能文献

空位缺陷对二维BeN单层吸附NH的影响:密度泛函理论研究

Influence of vacancy defects on 2D BeNmonolayer for NHadsorption: a density functional theory investigation.

作者信息

Lakshmy Seetha, Sanyal Gopal, Kalarikkal Nandakumar, Chakraborty Brahmananda

机构信息

International and Inter University Centre for Nanoscience and Nanotechnology, Mahatma Gandhi University, Kottayam 686 560, Kerala, India.

Chemical Engineering Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085, India.

出版信息

Nanotechnology. 2023 Aug 14;34(43). doi: 10.1088/1361-6528/acea28.

Abstract

Two-dimensional materials have attracted a great deal of interest in developing nanodevices for gas-sensing applications over the years. The 2D BeNmonolayer, a recently synthesized single-layered Dirac semimetal, has the potential to function as a gas sensor. This study analyzes the NHsensing capacity of the pristine and vacancy-induced BeNmonolayers using first-principles density functional theory (DFT) calculations. As per the results, the NHmolecule is physisorbed on the pristine BeNvia weak Van der Waals interaction with a poor adsorption energy of -0.41 eV and negligible charge transfer. Introducing Be vacancy in BeNincreased the NHadsorption energy to -0.83 eV due to the improved charge transfer (0.044 e) from the defective monolayer to the NHmolecule. The structural stability, sufficient recovery time (74 s) at room temperature, and superior work function sensitivity promise the potential application of defective BeNas an NHsensor. This research will be a theoretical groundwork for creating innovative BeN-based NHgas sensors.

摘要

多年来,二维材料在开发用于气体传感应用的纳米器件方面引起了极大的关注。二维BeN单层,一种最近合成的单层狄拉克半金属,具有作为气体传感器的潜力。本研究使用第一性原理密度泛函理论(DFT)计算分析了原始和空位诱导的BeN单层的NH传感能力。根据结果,NH分子通过弱范德华相互作用物理吸附在原始BeN上,吸附能较差,为-0.41 eV,电荷转移可忽略不计。由于从缺陷单层到NH分子的电荷转移(0.044 e)得到改善,在BeN中引入Be空位将NH吸附能提高到-0.83 eV。结构稳定性、室温下足够的恢复时间(74 s)以及优异的功函数敏感性保证了缺陷BeN作为NH传感器的潜在应用。本研究将为创建创新的基于BeN的NH气体传感器奠定理论基础。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验