Zhai Zihao, Chen Jieyi, Liu Qi, Jiang Shuangshuang, Li Yufang
College of Materials Science and Engineering, Anhui Polytechnic University, Wuhu 241000, P. R. China.
College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Yudao Street, Nanjing 210016, P. R. China.
ACS Appl Mater Interfaces. 2023 Aug 9;15(31):38068-38079. doi: 10.1021/acsami.3c07093. Epub 2023 Jul 28.
Interfacial modification is a promising strategy to fabricate highly efficient perovskite solar cells (PSCs). Nevertheless, research studies about optimization for the performance of Dion-Jacobson (DJ)-phase quasi-2D PSCs by underlying surface modification are rarely reported. The relevant influence of interfacial modification on defect regulation in the bulk and at the interface for PSCs is still unexplored. Herein, an interlayer of polyaspartic acid (PASP) was introduced at the interface of a hole transporting layer and a perovskite absorber to regulate both the film quality and interface property for BDA-based DJ quasi-2D PSCs ( = 5). The PASP interlayer suppressed the charge recombination, restricted the interfacial charge accumulation, and promoted the charge transport in devices and therefore improved the power conversion efficiency of PSCs from 15.03 to 17.34%. Moreover, through device simulation, it was concluded that the increase of open-circuit voltage () was mainly attributed to the suppression of interface defects, while the increase of short-circuit current () was ascribed to the restriction of interface defects and perovskite bulk defects. The improvement of both and originated from the passivation of shallow defect states. The present work provides a promising route for the fabrication of efficient quasi-2D PSCs and enriches the fundamental understanding of defect regulation on photovoltaic performance.
界面修饰是制备高效钙钛矿太阳能电池（PSC）的一种很有前景的策略。然而，关于通过底层表面修饰来优化狄翁-雅各布森（DJ）相准二维PSC性能的研究报道很少。界面修饰对PSC本体和界面处缺陷调控的相关影响仍未得到探索。在此，在空穴传输层和钙钛矿吸收层的界面处引入了聚天冬氨酸（PASP）中间层，以调控基于BDA的DJ准二维PSC（ = 5）的薄膜质量和界面性质。PASP中间层抑制了电荷复合，限制了界面电荷积累，并促进了器件中的电荷传输，因此将PSC的功率转换效率从15.03%提高到了17.34%。此外，通过器件模拟得出，开路电压（）的增加主要归因于界面缺陷的抑制，而短路电流（）的增加则归因于界面缺陷和钙钛矿本体缺陷的限制。 和 的提高均源于浅缺陷态的钝化。本工作为制备高效准二维PSC提供了一条很有前景的途径，并丰富了对缺陷调控对光伏性能影响的基本认识。
