Jmerik Valentin, Kozlovsky Vladimir, Wang Xinqiang
Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia.
P. N. Lebedev Physical Institute, Leninsky Ave. 53, 119991 Moscow, Russia.
Nanomaterials (Basel). 2023 Jul 15;13(14):2080. doi: 10.3390/nano13142080.
Powerful emitters of ultraviolet C (UVC) light in the wavelength range of 230-280 nm are necessary for the development of effective and safe optical disinfection technologies, highly sensitive optical spectroscopy and non-line-of-sight optical communication. This review considers UVC emitters with electron-beam pumping of heterostructures with quantum wells in an (Al,Ga)N material system. The important advantages of these emitters are the absence of the critical problem of p-type doping and the possibility of achieving record (up to several tens of watts for peak values) output optical power values in the UVC range. The review consistently considers about a decade of world experience in the implementation of various UV emitters with various types of thermionic, field-emission, and plasma-cathode electron guns (sources) used to excite various designs of active (light-emitting) regions in heterostructures with quantum wells of AlGaN/AlGaN (x = 0-0.5, y = 0.6-1), fabricated either by metal-organic chemical vapor deposition or by plasma-activated molecular beam epitaxy. Special attention is paid to the production of heterostructures with multiple quantum wells/two-dimensional (2D) quantum disks of GaN/AlN with a monolayer's (1 ML~0.25 nm) thickness, which ensures a high internal quantum efficiency of radiative recombination in the UVC range, low elastic stresses in heterostructures, and high-output UVC-optical powers.
对于有效且安全的光学消毒技术、高灵敏度光谱学和非视距光通信的发展而言，波长范围在230 - 280 nm的强大紫外线C（UVC）光源是必不可少的。本综述探讨了在（Al，Ga）N材料系统中通过电子束泵浦量子阱异质结构的UVC光源。这些光源的重要优势在于不存在p型掺杂的关键问题，并且有可能在UVC范围内实现创纪录的（峰值高达几十瓦）输出光功率值。本综述系统地回顾了大约十年的全球经验，涉及各种紫外线光源的实施情况，这些光源采用了各种类型的热离子、场发射和等离子体阴极电子枪（源），用于激发具有AlGaN/AlGaN（x = 0 - 0.5，y = 0.6 - 1）量子阱的异质结构中各种有源（发光）区域的设计，这些异质结构是通过金属有机化学气相沉积或等离子体激活分子束外延制造的。特别关注了具有单层（1 ML~0.25 nm）厚度的GaN/AlN多量子阱/二维（2D）量子盘异质结构的生产，这确保了UVC范围内辐射复合的高内部量子效率、异质结构中的低弹性应力以及高输出UVC光功率。
