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用于日盲通信的表面等离子体增强深紫外微发光二极管阵列

Plasmon-enhanced deep ultraviolet Micro-LED arrays for solar-blind communications.

作者信息

Zhang Siyao, He Rui, Duo Yiwei, Chen Renfeng, Wang Ligang, Wang Junxi, Wei Tongbo

出版信息

Opt Lett. 2023 Aug 1;48(15):3841-3844. doi: 10.1364/OL.496397.

Abstract

Localized surface plasmon resonance (LSPR)-enhanced deep ultraviolet (DUV) Micro-light emitting diodes (Micro-LEDs) using Al nanotriangle arrays (NTAs) are reported for improving the -3 dB modulation bandwidth. Through self-assembled nanospheres, the high-density Al NTAs arrays are transferred into the designated p-AlGaN region of the Micro-LEDs, realizing the effect of LSPR coupling. A 2.5-fold enhancement in photoluminescence (PL) intensity is demonstrated. Combined with the PL intensity ratio at 300 K and 10 K, internal quantum efficiency (IQE) may be increased about 15-20% by the plasmonic effect and the carrier lifetime decreases from 1.15 ns to 0.82 ns, suggesting that LSPR accelerates the spontaneous emission rate. Resulting from the improvement of the IQE, the electroluminescence intensity of Micro-LED arrays with LSPR is obviously increased. Meanwhile, the -3 dB bandwidth of 6 × 6 Micro-LED arrays is increased from 180 MHz to 300 MHz at a current density of 200 A/cm. A potential way is proposed to further increase both the IQE and the modulation bandwidth of DUV Micro-LEDs.

摘要

报道了使用铝纳米三角形阵列(NTA)的局域表面等离子体共振(LSPR)增强型深紫外(DUV)微发光二极管(Micro-LED),以提高-3dB调制带宽。通过自组装纳米球,将高密度铝NTA阵列转移到Micro-LED的指定p-AlGaN区域,实现LSPR耦合效应。证明光致发光(PL)强度提高了2.5倍。结合300K和10K时的PL强度比,等离子体效应可使内量子效率(IQE)提高约15-20%,载流子寿命从1.15ns降至0.82ns,这表明LSPR加速了自发发射速率。由于IQE的提高,具有LSPR的Micro-LED阵列的电致发光强度明显增加。同时,在200A/cm²的电流密度下,6×6 Micro-LED阵列的-3dB带宽从180MHz增加到300MHz。提出了一种进一步提高DUV Micro-LED的IQE和调制带宽的潜在方法。

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