Department of Periodontology, Laboratory for Periodontal-, Implant-, and Phototherapy, School of Dental Medicine, Stony Brook University, Stony Brook, New York.
Department of Family, Population and Preventive Medicine, School of Medicine, Stony Brook, New York.
J Oral Implantol. 2023 Aug 1;49(4):401-406. doi: 10.1563/aaid-joi-D-22-00234.
This study aimed to evaluate temperature changes in titanium and ceramic implants after using a 445-nm diode laser under different in vitro conditions. Titanium (Ti) and ceramic (Zr) dental implants were placed into a bone analog, and an intrabony defect was created at each implant. A 445-nm diode laser was used to irradiate the defects for 30 seconds, noncontact, at 2 W in continuous wave (c.w.) and pulsed mode. The experiment was done at room temperature (21.0 ± 1°C) and in a water bath (37.0 ± 1°C). Two thermocouple probes were used to record real-time temperature changes (°C) at the coronal part of the implant (Tc) and the apex (Ta). The temperature was recorded at time 0 (To) and after 30 seconds of irradiation (Tf). The average temperature change was calculated, and a descriptive analysis was conducted (P < .05). The Ti implant resulted in the highest ΔT values coronally (29.6°C) and apically (6.7°C) using continuous wave at 21°C. The Zr implant increased to 26.4°C coronally and 5.2°C apically. In the water bath, the coronal portion of the Ti and Zr implants rose to 14.2°C and 14.01°C, respectively, using continuous waves. The ΔT values for Ti were 11.9°C coronally and 1.7°C apically when placed in a water bath using pulsed mode. The lowest ΔT occurred on the Zr implant with ΔTc and ΔTa of 4.8°C and 0.78°C, respectively. Under in vitro conditions, the 445-nm diode laser in pulsed mode seems to be safe for use on ceramic implants and should be used with caution on titanium implants.
本研究旨在评估在不同的体外条件下,使用 445nm 半导体激光照射钛和陶瓷种植体时的温度变化。将钛(Ti)和陶瓷(Zr)牙科种植体植入骨模拟物中,并在每个种植体上创建一个骨内缺损。使用 445nm 半导体激光以 2W 的连续波(c.w.)和脉冲模式非接触照射缺陷 30 秒。实验在室温(21.0±1°C)和水浴(37.0±1°C)中进行。使用两个热电偶探头记录种植体冠部(Tc)和根尖(Ta)的实时温度变化(°C)。在 0 时间(To)和照射 30 秒后(Tf)记录温度。计算平均温度变化,并进行描述性分析(P<0.05)。在 21°C 时,连续波照射下 Ti 种植体的冠部和根尖的 ΔT 值最高,分别为 29.6°C 和 6.7°C。Zr 种植体分别增加到 26.4°C 和 5.2°C。在水浴中,Ti 和 Zr 种植体的冠部分别升高到 14.2°C 和 14.01°C,均采用连续波。在水浴中使用脉冲模式时,Ti 的 ΔT 值分别为 11.9°C 冠部和 1.7°C 根尖。Zr 种植体的 ΔT 值最低,分别为 4.8°C 冠部和 0.78°C 根尖。在体外条件下,脉冲模式的 445nm 半导体激光似乎对陶瓷种植体安全,对钛种植体应谨慎使用。