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过渡金属离子影响二维CdS纳米片光探测器的性能。

Transition Metal Ions Influence the Performance of Photodetector of Two-Dimensional CdS Nanoplatelets.

作者信息

Medda Anusri, Ghosh Soubhik, Patra Amitava

机构信息

School of Materials Sciences, Indian Association for the Cultivation of Science.

School of Materials Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata, 700032, India.

出版信息

Chemistry. 2023 Oct 18;29(58):e202301364. doi: 10.1002/chem.202301364. Epub 2023 Sep 15.

Abstract

Transition metal-doped two-dimensional (2D) semiconductor nanoplatelets (NPLs) with atomically precise thickness have attracted much research interest due to their inherent photo-physical properties. In this work, we have synthesized 2D Cu-doped CdS NPLs, investigated the charge transfer dynamics using ultrafast transient absorption spectroscopy, and fabricated an efficient photodetector device. A large Stoke's shifted emission at 685 nm with an average lifetime of about ~1.45 μs is observed in Cu-doped CdS NPLs. Slower bleach recovery kinetics leads to large charge carrier separation in Cu-doped NPLs which is beneficial for photodetector applications. Cu-doped NPLs-based photodetectors exhibit high photocurrent, fast response (120 ms), 600 times higher photoresponsivity, and ~300 times higher detectivity (4.1×10 Jones) than undoped CdS NPLs. These excellent properties of Cu-doped CdS NPLs make this material an efficient alternative for next-generation optoelectronic devices.

摘要

具有原子精确厚度的过渡金属掺杂二维(2D)半导体纳米片(NPLs)因其固有的光物理性质而引起了广泛的研究兴趣。在这项工作中,我们合成了二维铜掺杂硫化镉纳米片,使用超快瞬态吸收光谱研究了电荷转移动力学,并制造了一种高效的光电探测器器件。在铜掺杂硫化镉纳米片中观察到在约685nm处有大斯托克斯位移发射,平均寿命约为1.45μs。较慢的漂白恢复动力学导致铜掺杂纳米片中电荷载流子的大量分离,这有利于光电探测器应用。基于铜掺杂纳米片的光电探测器表现出高光电流、快速响应(约120ms)、比未掺杂的硫化镉纳米片高约600倍的光响应度和约300倍的探测率(约4.1×10琼斯)。铜掺杂硫化镉纳米片的这些优异特性使其成为下一代光电器件的有效替代材料。

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