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确定在缓冲金属上生长的最大自场Jcin YBCO/CeO多层膜的最佳厚度。

Defining optimal thickness for maximal self-fieldJcin YBCO/CeOmultilayers grown on buffered metal.

作者信息

Tuomola A, Rivasto E, Aye M M, Zhao Y, Huhtinen H, Paturi P

机构信息

Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland.

University of Turku Graduate School (UTUGS), University of Turku, FI-20014 Turku, Finland.

出版信息

J Phys Condens Matter. 2023 Aug 29;35(47). doi: 10.1088/1361-648X/acee3d.

DOI:10.1088/1361-648X/acee3d
PMID:37552999
Abstract

The effect of multilayering YBaCuO6+x(YBCO) thin films with sequentially deposited CeOlayers between YBCO layers grown on buffered metallic template is investigated to optimize the self-field critical current densityJc(0). We have obtained that the improvement inJc(0)clearly depends on the YBCO layer thickness and temperature, where at high temperatureJc(0)can be increased even 50% when compared with the single layer YBCO films. Based on our experimental results and theoretical approach to the growth mechanism during multilayer deposition, we have defined a critical thickness for the YBCO layer, where the maximal self-fieldJc(0)is strongly related to the competing issues between the uniform and nonuniform strain relaxation and the formation of dislocations and other defects during the film growth. Our results can be directly utilized in the future coated conductor technology, when maximizing the overall in-fieldJc(B)by combining both the optimal crystalline quality and flux pinning properties typically in bilayer film structures.

摘要

研究了在缓冲金属模板上生长的YBaCuO6+x(YBCO)薄膜层间依次沉积CeO层的多层结构对自场临界电流密度Jc(0)的影响,以优化Jc(0)。我们发现,Jc(0)的提高明显取决于YBCO层的厚度和温度,在高温下,与单层YBCO薄膜相比,Jc(0)甚至可以提高50%。基于我们的实验结果和多层沉积过程中生长机制的理论方法,我们定义了YBCO层的临界厚度,其中最大自场Jc(0)与薄膜生长过程中均匀和非均匀应变弛豫以及位错和其他缺陷形成之间的竞争问题密切相关。当通过结合双层薄膜结构中典型的最佳晶体质量和磁通钉扎特性来最大化整体场内Jc(B)时,我们的结果可直接应用于未来的涂层导体技术。

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