通过铝岛沉积辅助提高基于P3HT取向浮膜的有机光电晶体管性能。

Enhancing the Performance of Organic Phototransistors Based on Oriented Floating Films of P3HT Assisted by Al-Island Deposition.

作者信息

Lahane Tejswini K, Sharma Shubham, Desu Moulika, Ando Yoshito, Pandey Shyam S, Singh Vipul

机构信息

Molecular and Nanoelectronics Research Group (MNRG), Department of Electrical Engineering, IIT Indore, Indore 453552, Madhya Pradesh, India.

Graduate School of Life Science and System Engineering, Kyushu Institute of Technology, 2-4, Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan.

出版信息

Materials (Basel). 2023 Jul 26;16(15):5249. doi: 10.3390/ma16155249.

DOI:10.3390/ma16155249

PMID:37569953

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10419503/

Abstract

The fabrication of high-performance Organic Phototransistors (OPTs) by depositing Al-islands atop Poly(3-hexylthiophene) (P3HT) thin film coated using the unidirectional floating-film transfer method (UFTM) has been realized. Further, the effect of Al-island thickness on the OPTs' performance has been intensively investigated using X-ray photoelectron spectroscopy, X-ray Diffraction, Atomic force microscopy and UV-Vis spectroscopy analysis. Under the optimized conditions, OPTs' mobility and on-off ratio were found to be 2 × 10 cm V s and 3 × 10, respectively. Further, the device exhibited high photosensitivity of 10, responsivity of 339 A/W, detectivity of 3 × 10 Jones, and external quantum efficiency of 7.8 × 10% when illuminated with a 525 nm LED laser (0.3 mW/cm).

摘要

通过在采用单向浮膜转移法（UFTM）涂覆的聚（3-己基噻吩）（P3HT）薄膜上沉积铝岛，实现了高性能有机光电晶体管（OPT）的制备。此外，还利用X射线光电子能谱、X射线衍射、原子力显微镜和紫外-可见光谱分析深入研究了铝岛厚度对OPT性能的影响。在优化条件下，发现OPT的迁移率和开/关比分别为2×10 cm² V⁻¹ s⁻¹和3×10⁴。此外，当用525 nm LED激光（0.3 mW/cm²）照射时，该器件表现出10⁵的高光敏度、339 A/W的响应度、3×10¹² Jones的探测率和7.8×10³%的外量子效率。