Parmar P R, Khengar S J, Sonvane Yogesh, Thakor P B
Department of Physics, Veer Narmad South Gujarat University, Surat 395007, India.
Advance Material Lab, Department of Physics, Sardar Vallabhbhai National Institute of Technology, Surat 395007, India.
Phys Chem Chem Phys. 2023 Aug 23;25(33):22258-22274. doi: 10.1039/d3cp01338c.
In this investigation, the structural, electronic, and optical properties of two-dimensional van der Waals heterostructure (vdwHS) PtSe/GaSe with three different configurations have been studied using density functional theory with the generalized gradient approximation. All three optimized vdwHSs PtSe/GaSe have positive phonon frequencies and hexagonal unit cells. The hybrid exchange-correlation functional has been employed to study the electronic properties of vdwHSs PtSe/GaSe. The vdwHSs PtSe/GaSe shows semiconducting behavior with indirect Type-II bandgaps, which have been confirmed by the charge density difference, electrostatic potential, work function, and band edge calculations. Additionally, from the band edge positions, the vdwHSs PtSe/GaSe are analyzed for photocatalytic activities. The optical properties such as extinction coefficient, refractive index, reflectivity, energy loss spectrum, and absorption coefficient have been studied using norm-conserving pseudo-potentials. The vdwHSs PtSe/GaSe exhibit consistent absorption from the visible to the ultraviolet region of the electromagnetic spectrum. From the obtained results, we conclude that vdwHSs PtSe/GaSe could be utilized for H production through photocatalytic activity as well as for optoelectronic devices and their application.
在本研究中,利用广义梯度近似的密度泛函理论研究了具有三种不同构型的二维范德华异质结构(vdwHS)PtSe₂/GaSe的结构、电子和光学性质。所有三种优化后的vdwHSs PtSe₂/GaSe都具有正的声子频率和六边形晶胞。采用杂化交换关联泛函研究了vdwHSs PtSe₂/GaSe的电子性质。vdwHSs PtSe₂/GaSe表现出具有间接II型带隙的半导体行为,这已通过电荷密度差、静电势、功函数和带边计算得到证实。此外,根据带边位置,对vdwHSs PtSe₂/GaSe的光催化活性进行了分析。使用守恒赝势研究了消光系数、折射率、反射率、能量损失谱和吸收系数等光学性质。vdwHSs PtSe₂/GaSe在电磁光谱的可见光到紫外区域表现出一致的吸收。根据所得结果,我们得出结论,vdwHSs PtSe₂/GaSe可用于通过光催化活性制氢以及用于光电器件及其应用。