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用于高性能水系锌离子电池的独立式缺陷钒酸铵@MXene混合薄膜阴极

Freestanding defective ammonium Vanadate@MXene hybrid films cathode for high performance aqueous zinc ion batteries.

作者信息

Qi Junjie, Zhang Yufen, Wen Jinjin, Zhai Haonan, Li Meng, Zhang Yaning, Xu Huiting, Yang Wenyue, Li Chunli, Wang Honghai, Peng Wenchao, Liu Jiapeng

机构信息

School of Chemical Engineering and Technology, National-Local Joint Engineering Laboratory for Energy Conservation in Chemical Process Integration and Resources Utilization, Hebei University of Technology, Tianjin 300130, China.

School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China.

出版信息

J Colloid Interface Sci. 2023 Dec 15;652(Pt A):285-293. doi: 10.1016/j.jcis.2023.08.081. Epub 2023 Aug 12.

DOI:10.1016/j.jcis.2023.08.081
PMID:37595445
Abstract

Aqueous zinc ion batteries (AZIBs) have gained extensive attention due to the numerous advantages of zinc, such as low redox potential, high abundance, low cost as well as high theoretical specific capacity. However, the development of AZIBs is still hampered due to the lack of suitable cathodes. In this work, the freestanding defective ammonium vanadate@MXene (d-NVO@MXene) hybrid film was synthesized by simple vacuum filtration strategy. Due to the presence of the hierarchical freestanding structure, outstanding MXene conductive networks and abundant oxygen vacancy (in the d-NVO nanoribbons), the d-NVO@MXene hybrid film can not only expose more active sites but also possess outstanding conductivity and kinetics of charge transfer/ion diffusion. When the d-NVO@MXene hybrid film was directly used as the cathode, it displayed a high specific capacity of 498 mAh/g at 0.5 A/g and superior cycling stability performance with near 100 % coulomb efficiency. Furthermore, the corresponding storage mechanism was elucidated by ex situ various characterizations. This work provides new ideas for the development of freestanding vanadium-based cathode materials for AZIBs.

摘要

水系锌离子电池(AZIBs)由于锌具有诸多优点,如氧化还原电位低、储量丰富、成本低以及理论比容量高,而受到广泛关注。然而,由于缺乏合适的阴极,AZIBs的发展仍然受到阻碍。在这项工作中,通过简单的真空过滤策略合成了独立的缺陷型钒酸铵@MXene(d-NVO@MXene)复合薄膜。由于存在分级独立结构、出色的MXene导电网络以及丰富的氧空位(在d-NVO纳米带中),d-NVO@MXene复合薄膜不仅可以暴露更多的活性位点,还具有出色的导电性和电荷转移/离子扩散动力学。当d-NVO@MXene复合薄膜直接用作阴极时,在0.5 A/g下显示出498 mAh/g的高比容量以及具有近100%库仑效率的优异循环稳定性。此外,通过各种非原位表征阐明了相应的存储机制。这项工作为开发用于AZIBs的独立钒基阴极材料提供了新思路。

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